Chapter 16

Using BJT Models

The bipolar-junction transistor (BJT) model in Star-Hspice is an adaptation of the integral charge control model of Gummel and Poon.

The Star-Hspice model extends the original Gummel-Poon model to include several effects at high bias levels. This model automatically simplifies to the Ebers-Moll model when certain parameters (VAF, VAR, IKF, and IKR) are not specified.

This chapter covers the following topics:

• Using BJT Models
• Understanding the BJT Model Statement
• Using BJT Device Equivalent Circuits
• Using BJT Model Equations (NPN and PNP)
• Using BJT Capacitance Equations
• Defining BJT Noise Equations
• Using BJT Temperature Compensation Equations
• Using the BJT Quasi-Saturation Model
• Converting National Semiconductor Models
• Using the VBIC Bipolar Transistor Model
• LEVEL 6 Philips Bipolar Model (MEXTRAM LEVEL 503)
• LEVEL 6 Philips Bipolar Model (MEXTRAM LEVEL 504)
• LEVEL 8 HiCUM Model