Use the BJT quasi-saturation model (LEVEL=2), an extension of the Gummel-Poon model (LEVEL 1 model), to model bipolar junction transistors that exhibit quasi-saturation or base push-out effects. When a device with lightly doped collector regions operates at high injection levels, the internal base-collector junction is forward biased, while the external base-collector junction is reversed biased; DC current gain and the unity gain frequency fT falls sharply. Such an operation regime is referred to as quasi-saturation, and its effects have been included in this model.
Vertical npn Bipolar Transistor (SUBS=+1) show the additional elements of the LEVEL 2 model. The current source Iepi and charge storage elements Ci and Cx model the quasi-saturation effects. The parasitic substrate bipolar transistor is also included in the vertical transistor by the diode D and current source Ibs.
The epitaxial current value, Iepi, is determined by the equation:
In special cases when the model parameter GAMMA is set to zero, ki and kx become one and,
The epitaxial charges are determined by:
The corresponding capacitances are calculated as:
In the special case where GAMMA=0 the Ci and Cx become zero.
*quasisat.sp comparison of bjt LEVEL1 and LEVEL2
.options nomod relv=.001 reli=.001 absv=.1u absi=1p
.print dc vce=par('v(10)') i(q11) i(q12) i(q21)
+ i(q22) i(q31) i(q32)
*.graph dc i(q11) i(q12) i(q21) i(q22)
.MODEL MOD1 NPn IS=4.0E-16 BF=75 VAF=75
.MODEL MOD2 NPn IS=4.0E-16 BF=75 VAF=75
+ LEVEL=2 rc=500 vo=1 qco=1e-10