LEVEL 6 Philips Bipolar Model (MEXTRAM LEVEL 503)
The Philips bipolar model (MEXTRAM LEVEL 503) is now installed in Star-Hspice as BJT LEVEL 6. The MEXTRAM covers several effects that are not included in, e.g., the original Gummel-Poon model. These effects include:
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Temperature
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Charge storage
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Substrate
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Parasitic PNP
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High-injection
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Built-in electric field in base region
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Bias-dependent Early effect
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Low-level, non-ideal base currents
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Hard- and quasi-saturation
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Weak avalanche
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Hot carrier effects in the collector epilayer
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Explicit modeling of inactive regions
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Split base-collector depletion capacitance
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Current crowding and conductivity modulation for base resistance
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First order approximation of distributed high frequency effects in the intrinsic base (high frequency current crowding and excess phase shift)
The description for this model can be found at "http://www-us.semiconductors.com/Philips_Models/".
LEVEL 6 Element Syntax
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General Form
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Qxxx nc nb ne <ns> mname <AREA=val>
+ <OFF<VBE=val><VCE=val> <M=val>
+ <DTEMP=val>
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where the angle brackets indicate optional parameters.
The arguments are as follows:
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Qxxx
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BJT element name. Must begin with Q, which can be followed by up to 1023 alphanumeric characters.
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nc
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Collector terminal node name or number.
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nb
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Base node name or number.
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ne
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Emitter terminal node name or number.
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ns
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Substrate node name or number.
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mname
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BJT model name reference.
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AREA
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The normalized emitter area.
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OFF
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Sets initial condition to OFF for this element in DC analysis.
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VBE
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Initial internal base to emitter voltage.
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VCE
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Initial internal collector to emitter voltage.
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M
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Multiplier to simulate multiple BJTs in parallel.
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DTEMP
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The difference between element and circuit temperature.
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LEVEL 6 Model Parameters
The following tables describe MEXTRAM as LEVEL 6 model parameters including parameters name, descriptions, units, default values and notes.
Flags
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Parameter
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Unit
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Default
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Description
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LEVEL
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-
|
-
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LEVEL 6 for MEXTRAM
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EXAVL
|
-
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0
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Flag for extended modeling of avalanche currents
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EXMOD
|
-
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0
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Flag for extended modeling of the reverse current gain
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EXPHI
|
-
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1
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Flag for distributed high frequency effects
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Basic Parameters
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Parameter
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Unit
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Default
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Description
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TREF
|
oC
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0.0
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Model nominal temperature
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IS
|
A
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5.E-17
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Collector-emitter saturation current
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BF
|
A
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140.0
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Ideal forward current gain
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XIBI
|
-
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0.0
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Fraction of ideal base current that belongs to the sidewall
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IBF
|
A
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2.0E-14
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Saturation current of the non-ideal forward base current
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VLF
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V
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0.5
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Cross-over voltage of the non-ideal forward base current
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IK
|
A
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15.E-3
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High-injection knee current
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BRI
|
-
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16.0
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Ideal reverse current gain
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IBR
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A
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8.0e-15
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Saturation current of the non-ideal reverse base current
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VLR
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V
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0.5
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Cross-over voltage of the non-ideal reverse base current
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XEXT
|
-
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0.5
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Part of I EX ,Q EX ,Q TEX and I SUB that depends on the base-collector voltage VBC1
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QBO
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C
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1.2e-12
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Base charge at zero bias
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ETA
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-
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4.0
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Factor of the built-in field of the base
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AVL
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-
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50.
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Weak avalanche parameter
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EFI
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-
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0.7
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Electric field intercept (with EXAVL=1)
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IHC
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A
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3.e-3
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Critical current for hot carriers
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RCC
|
ohm
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25.
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Constant part of the collector resistance
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RCV
|
ohm
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750.
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Resistance of the unmodulated epilayer
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SCRCV
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ohm
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1000.0
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Space charge resistance of the epilayer
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SFH
|
-
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0.6
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Current spreading factor epilayer
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RBC
|
ohm
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50.
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Constant part of the base resistance
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RBV
|
ohm
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100.
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Variable part of the base resistance at zero bias
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RE
|
ohm
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2.0
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Emitter series resistance
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TAUNE
|
s
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3.e-10
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Minimum delay time of neutral and emitter charge
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MTAU
|
-
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1.18
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Non-ideality factor of the neutral and emitter charge
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CJE
|
F
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2.5e-13
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Zero bias collector-base depletion capacitance
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VDE
|
V
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0.9
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Emitter-base diffusion voltage
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PE
|
-
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0.33
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Emitter-base grading coefficient
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XCJE
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F
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0.5
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Fraction of the emitter-base depletion capacitance that belongs to the sidewall
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CJC
|
F
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1.3e-13
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Zero bias collector-base depletion capacitance
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VDC
|
V
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0.6
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Collector-base diffusion voltage
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PC
|
-
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0.4
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Collector-base grading coefficient variable part
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XP
|
F
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0.2
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Constant part of CJC
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MC
|
-
|
0.5
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Collector current modulation coefficient
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XCJC
|
-
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0.1
|
Fraction of the collector-base depletion capacitance under the emitter area
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VGE
|
V
|
1.01
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Band-gap voltage of the emitter
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VGB
|
V
|
1.18
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Band-gap voltage of the base
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VGC
|
V
|
1.205
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Band-gap voltage of the collector
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VGJ
|
V
|
1.1
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Band-gap voltage recombination emitter-base junction
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VI
|
V
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0.040
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Ionization voltage base dope
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NA
|
cm^-3
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3.0E17
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Maximum base dope concentration
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ER
|
-
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2.E-3
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Temperature coefficient of VLF and VLR
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AB
|
-
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1.35
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Temperature coefficient resistivity of the base
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AEPI
|
-
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2.15
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Temperature coefficient resistivity of the epilayer
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AEX
|
-
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1.
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Temperature coefficient resistivity of the extrinsic base
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AC
|
-
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0.4
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Temperature coefficient resistivity of the buried layer
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KF
|
-
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2.E-16
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Flicker noise coefficient ideal base current
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KFN
|
-
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2.E-16
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Flicker noise coefficient non-ideal base current
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AF
|
-
|
1.0
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Flicker noise exponent
|
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ISS
|
A
|
6.E-16
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Base-substrate saturation current
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IKS
|
A
|
5.E-6
|
Knee current of the substrate
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CJS
|
F
|
1.e-12
|
Zero bias collector-substrate depletion capacitance
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VDS
|
V
|
0.5
|
Collector-substrate diffusion voltage
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PS
|
-
|
0.33
|
Collector-substrate grading coefficient
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VGS
|
V
|
1.15
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Band-gap voltage of the substrate
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AS
|
-
|
2.15
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For a closed buried layer: AS=AC
For an open buried layer: AS=AEPI
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Example
*Simulation Input File
.options gmin=1e-13 gmindc=1e-13 POST=1 converge=1
QCKT 1 2 3 4 mextram area=1.0 m=1
* START SOURCES
VE 3 0 DC 0
VB 2 0 DC 0
VC 1 0 DC 0.1
VS 4 0 DC 0
.DC Vb 0.1 0.90001 0.1
.op
.PRINT DC I(VC) I(VB) I(VE) I(VS)
.temp 22
.model mextram npn LEVEL=6
+ TREF = 2.200000e+01
+ EXMOD= 1.000000e+00 EXPHI= 0.000000e+00
+ EXAVL= 1.000000e+00 IS = 9.602000e-18 BF = 1.381000e+02
+ XIBI = 0.000000e+00 IBF = 2.614800e-15 VLF = 6.164000e-01
+ IK = 1.500000e-02 BRI = 5.951000e+00 IBR = 4.606600e-14
+ VLR = 5.473000e-01 XEXT = 6.016000e-01 QBO = 9.439600e-14
+ ETA = 4.800000e+00 AVL = 6.329000e+01 EFI = 7.306000e-01
+ IHC = 4.541900e-04 RCV = 9.819000e+02 RCC=1.91e+01
+ SCRCV= 1.899000e+03 SFH = 3.556000e-01 RBC = 1.165000e+02
+ RBV = 3.077000e+02 RE = 2.525000e+00 TAUNE= 4.126600e-12
+ MTAU = 1.000000e+00 CJE = 4.909400e-14 VDE = 8.764000e-01
+ PE = 3.242000e-01 XCJE = 2.600000e-01 CJC = 8.539400e-14
+ VDC = 6.390000e-01 PC = 5.237000e-01 XP = 6.561000e-01
+ MC = 5.000000e-01 XCJC= 2.759700e-02 VGE = 1.129000e+00
+ VGB = 1.206000e+00 VGC = 1.120000e+00 VGJ = 1.129000e+00
+ VI = 2.100000e-02 NA = 4.400000e+17 ER = 2.000000e-03
+ AB = 1.000000e+00 AEPI =1.900000e+00 AEX= 3.100000e-01
+ AC = 2.600000e-01 KF =2.000000e-16 KFN = 2.000000e-16
+ AF = 1.000000e+00 ISS = 5.860200e-17 IKS = 6.481200e-06
+ CJS = 2.219600e-13 VDS = 5.156000e-01 PS = 3.299000e-01
+ VGS = 1.120000e+00 AS = 1.900000e+00
.END
Star-Hspice Manual - Release 2001.2 - June 2001
