LEVEL 58 University of Florida SOI Model
UFSOI has non-fully depleted (NFD) and fully depleted (FD) SOI models (no dynamic mode operating between NFD and FD allowed) that separately describe two main types of SOI devices. The UFSOI version 4.5F model has been installed in Star-Hspice as LEVEL 58. This model is described in the "UFSOI Model User's Manual," which can be found at "http://www.soi.tec.ufl.edu/".
In some processes, there is an external contact to the body of the device. In the 1999.2 release, Star-Hspice only supports a 4-terminal device, which includes drain, front gate, source and back gate (or substrate). The additional body contact is currently not supported and is floated.
The effects of parasitic diodes in SOI are different from those in bulk MOSFET. The Star-Hspice junction model (ACM), developed for bulk MOSFETs, is not included in the SOI model.
The general syntax for including LEVEL 58 in a Star-Hspice netlist follows:
General Form
Mxxx nd ngf ns <ngb> mname <L=val> <W=val> <M=val>
+ <AD=val> <AS=val> <PD=val> <PS=val> <NRD=val>
+ <NRS=val> <NRB=val> <RTH=val> <CTH=val> <off>
+ <IC=Vds,Vgfs,VGbs>
where the angle brackets indicate optional parameters. The arguments are identical to those used for BSIM3-SOI model, except the thermal resistance and capacitance have different names:
|
RTH
|
Thermal resistance, unit in K·W-1 , defaulted to 0.0
|
|
CTH
|
Thermal capacitance , unit in W·s·K-1 , defaulted to 0.0
|
Notes
:
-
The defaulted value for channel length L and width W is 1.0e-6.
-
The present version supports only 4 nodes, which means only floating-body devices are supported. AB is typically zero and should be specified accordingly.
-
When the self-heating option is activated (on the model line), RTH and CTH, typical values of which are 5e3 and 1e-12, respectively, but which can vary widely from one device to another, are used to define the thermal impedance of the device.
-
For M > 1, W, AD, AS, NRD, NRS, NRB, PDJ, PSJ, RTH, and CTH must be specified per gate finger.
-
The initial condition IC is in the order: drain voltage Vds, front gate voltage Vgfs, and back gate voltage Vbgs.
LEVEL 58 FD/SOI MOSFET Model Parameters
The following tables describe the LEVEL 58 model parameters for fully depleted (FD) SOI including parameter name, descriptions, units, default and typical notes.
Flag Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
LEVEL
|
-
|
-
|
-
|
LEVEL 57 for UFSOI
|
|
NFDMOD
|
-
|
0
|
0
|
Model selector (0: FD)
|
|
BJT
|
-
|
1
|
1
|
Parasitic bipolar flag (0: off; 1: on)
|
|
SELFT
|
-
|
0
|
0
|
Self-heating flag (0: no self-heating; 1: approximate model; 2: full self-heating)
|
|
TPG
|
-
|
1
|
-
|
Type of gate polysilicon (+1: opposite to body; -1: same as body)
|
|
TPS
|
-
|
-1
|
-
|
Type of substrate (+1: opposite to body; -1: same as body)
|
Structural Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
TOXF
|
m
|
1.0e-8
|
(3-8)x10-9
|
Front-gate oxide thickness
|
|
TOXB
|
m
|
0.5e-6
|
(80-400)
x10-9
|
Back-gate oxide thickness
|
|
NSUB
|
cm
-3
|
1.0e15
|
1015-1017
|
Substrate doping density
|
|
NGATE
|
cm
-3
|
0.0
|
1019-1020
|
Poly-gate doping density (0 for no poly-gate depletion)
|
|
NDS
|
cm
-3
|
5.0e19
|
1019-1020
|
Source/drain doping density
|
|
TB
|
m
|
0.1e-6
|
(30-100)
x10-9
|
Film (body) thickness
|
|
NBODY
|
cm
-3
|
5.0e16
|
1017-1018
|
Film (body) doping density
|
|
LLDD
|
m
|
0.0
|
(0.05-0.2)
x10-6
|
LDD/LDS region length (0 for no LDD)
|
|
NLDD
|
cm
-3
|
5.0e19
|
1x1019
|
LDD/LDS doping density (>1e19: LDD/LDS treated as D/S extensions)
|
|
DL
|
m
|
0.0
|
(0.05-0.15)x10-6
|
Channel-length reduction
|
|
DW
|
m
|
0.0
|
(0.1-0.5)
x10-6
|
Channel-width reduction
|
Electrical Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
NQFF
|
cm
-2
|
0.0
|
~ 1010
|
Front oxide fixed charge (normalized)
|
|
NQFB
|
cm
-2
|
0.0
|
~ 1011
|
Back oxide fixed charge (normalized)
|
|
NQFSW
|
cm
-2
|
0.0
|
~ 
1012
|
Effective sidewall fixed charge (0 for no narrow-width effect)
|
|
NSF
|
cm
-2
·eV
-1
|
0.0
|
~1010
|
Front surface state density
|
|
NSB
|
cm
-2
·eV
-1
|
0.0
|
~ 1011
|
Back surface state density
|
|
QM
|
-
|
0.0 -0.5
|
|
Energy quantization parameter (0 for no quantization)
|
|
UO
|
cm
2
·V
-1
·s
-1
|
7.0e2
|
200-700 (nMOS)
70-400
(pMOS)
|
Low-field mobility
|
|
THETA
|
cm·V
-1
|
7.0e2
|
(0.1-3)
x10-6
|
Mobility degradation coefficient
|
|
VSAT
|
cm·s
-1
|
1.0e-6
|
(0.5-1)x10
|
Carrier saturated drift velocity
|
|
ALPHA
|
cm
-1
|
0.0
|
2.45x106
|
Impact-ionization coefficient (0 for no impact ionization)
|
|
BETA
|
V·cm
-1
|
0.0
|
1.92x106
|
Impact-ionization exponential factor (0 for no impact ionization)
|
|
BGIDL
|
V·cm
-1
|
0.0
|
(4-8)x109
|
Exponential factor for gate-induced
drain leakage (0 for no GIDL)
|
|
GAMMA
|
-
|
0.3
|
0.3-1.0
|
BOX fringing field weighting factor
|
|
KAPPA
|
-
|
0.5
|
0.5-1.0
|
BOX fringing field weighting factor
|
|
JRO
|
A·m
-1
|
1.0e-10
|
10-11-10-9
|
Body-source/drain junction recombination current coefficient
|
|
M
|
-
|
2.0
|
1.0-2.0
|
Body-source/drain junction recombination ideality factor
|
|
LDIFF
|
m
|
1.0e-7
|
(0.1-0.5)
x10-6
|
Effective diffusion length in source/drain
|
|
SEFF
|
cm·s-1
|
1.0e5
|
(0.5-5)
x105
|
Effective recombination velocity in source/drain
|
|
CGFDO
|
F·m
-1
|
0.0
|
1x10-10
|
Gate-drain overlap capacitance
|
|
CGFSO
|
F·m
-1
|
0.0
|
1x10-10
|
Gate-source overlap capacitance
|
|
CGFBO
|
F·m
-1
|
0.0
|
0.0
|
Gate-body overlap capacitance
|
|
RD
|
ohm·m
|
0.0
|
200-1000
|
Specific drain parasitic resistance
|
|
RS
|
ohm·m
|
0.0
|
200-1000
|
Specific source parasitic resistance
|
|
RHOB
|
ohm/sq.
|
0.0
|
30x103
|
Body sheet resistance
|
|
FNK
|
F·A
|
0.0
|
0-10-2
|
Flicker noise coefficient
|
|
FNA
|
-
|
1.0
|
0.5-2
|
Flicker noise exponent
|
Optional Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
VFBF
|
V
|
calc.
|
-1 (nMOS)
1 (pMOS)
|
Front-gate flatband voltage
|
|
VFBB
|
V
|
calc.
|
-
|
Back-gate flatband voltage
|
|
WKF
|
V
|
calc.
|
~ VFBF
|
Front-gate work function difference
|
|
WKB
|
V
|
calc.
|
-
|
Back-gate work function difference
|
|
TAUO
|
s
|
calc.
|
10-7-10-5
|
Carrier lifetime in lightly doped regions
|
|
BFACT
|
-
|
0.3
|
0.1-0.5
|
V
DS
-averaging factor for mobility degradation
|
|
FVBJT
|
-
|
0.0
|
0-1
|
BJT current directional partitioning factor (0 for lateral 1D flow)
|
|
RHOSD
|
ohm/sq.
|
0.0
|
50
|
Source/drain sheet resistance
|
LEVEL 58 NFD/SOI MOSFET Model Parameters
The following tables describe the LEVEL 58 model parameters for non-fully depleted (NFD) SOI including parameter name, descriptions, units, default and typical notes.
Flag Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
LEVEL
|
-
|
-
|
-
|
LEVEL 57 for UFSOI
|
|
NFDMOD
|
-
|
0
|
-
|
Model selector(1: NFD)
|
|
BJT
|
-
|
1
|
1
|
Parasitic bipolar flag (0: off; 1: on)
|
|
SELFT
|
-
|
0
|
0
|
Self-heating flag (0: no self-heating; 1: approximate model;
2: full self-heating)
|
|
TPG
|
-
|
1
|
1
|
Type of gate polysilicon (+1: opposite to body; -1: same as body)
|
|
TPS
|
-
|
-1
|
-1
|
Type of substrate (+1: opposite to body; -1: same as body)
|
Structural Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
TOXF
|
m
|
1.0e-8
|
(3-8)x10-9
|
Front-gate oxide thickness
|
|
TOXB
|
m
|
0.5e-6
|
(80-400)
x10-9
|
Back-gate oxide thickness
|
|
NSUB
|
cm
-3
|
1.0e15
|
1015-1017
|
Substrate doping density
|
|
NGATE
|
cm
-3
|
0.0
|
1019-1020
|
Poly-gate doping density (0 for no poly-gate depletion)
|
|
NDS
|
cm
-3
|
5.0e19
|
1019-1020
|
Source/drain doping density
|
|
TF
|
m
|
0.2e-6
|
(3-8)x10-9
|
Silicon film thickness
|
|
TB
|
m
|
0.1e-6
|
(30-100)
x10-9
|
Film (body) thickness
|
|
THALO
|
m
|
0.0
|
-
|
Halo thickness
(0 for no halo
)
|
|
NBL
|
cm
-3
|
5.0e16
|
1017-1018
|
Low body doping density
|
|
NBH
|
cm
-3
|
5.0e17
|
1019-1020
|
Halo doping density
|
|
NHALO
|
cm
-3
|
-
|
~1018
|
Halo doping density
|
|
LRSCE
|
m
|
0.0
|
~0.1x10-6
|
Characteristic length for reverse short-channel effect (0 for no RSCE)
|
|
LLDD
|
m
|
0.0
|
(0.05-0.2)
x10-6
|
LDD/LDS region length (0 for no LDD)
|
|
NLDD
|
cm
-3
|
5.0e19
|
1x1019
|
LDD/LDS doping density
(>1e19: LDD/LDS treated as D/S extensions)
|
|
DL
|
m
|
0.0
|
(0.05-0.15)x10-6
|
Channel-length reduction
|
|
DW
|
m
|
0.0
|
(0.1-0.5)
x10-6
|
Channel-width reduction
|
Electrical Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
NQFF
|
cm
-2
|
0.0
|
~ 1010
|
Front oxide fixed charge (normalized)
|
|
NQFB
|
cm
-2
|
0.0
|
~ 1011
|
Back oxide fixed charge (normalized)
|
|
NQFSW
|
cm
-2
|
0.0
|
~ 
1012
|
Effective sidewall fixed charge
(0 for no narrow-width effect)
|
|
QM
|
-
|
0.0 -0.5
|
|
Energy quantization parameter (0 for no quantization)
|
|
UO
|
cm
2
·V
-1
·s
-1
|
7.0e2
|
200-700 (nMOS)
70-400
(pMOS)
|
Low-field mobility
|
|
THETA
|
cm·V
-1
|
7.0e2
|
(0.1-3)
x10-6
|
Mobility degradation coefficient
|
|
VSAT
|
cm·s
-1
|
1.0e-6
|
(0.5-1)
x10
|
Carrier saturated drift velocity
|
|
ALPHA
|
cm
-1
|
0.0
|
2.45x106
|
Impact-ionization coefficient (0 for no impact ionization)
|
|
BETA
|
V·cm
-1
|
0.0
|
1.92x106
|
Impact-ionization exponential factor
(0 for no impact ionization)
|
|
BGIDL
|
V·cm
-1
|
0.0
|
(4-8)x109
|
Exponential factor for gate-induced
drain leakage (0 for no GIDL)
|
|
NTR
|
cm-3
|
0.0
|
1014-1015
|
Effective trap density for trap-assisted junction tunneling (0 for no tunneling)
|
|
JRO
|
A·m
-1
|
1.0e-10
|
10-11-10-9
|
Body-source/drain junction recombination current coefficient
|
|
M
|
-
|
2.0
|
1.0-2.0
|
Body-source/drain junction recombination ideality factor
|
|
LDIFF
|
m
|
1.0e-7
|
(0.1-0.5)
x10-6
|
Effective diffusion length in source/drain
|
|
SEFF
|
cm·s-1
|
1.0e5
|
(0.5-5)
x105
|
Effective recombination velocity in source/drain
|
|
CGFDO
|
F·m
-1
|
0.0
|
1x10-10
|
Gate-drain overlap capacitance
|
|
CGFSO
|
F·m
-1
|
0.0
|
1x10-10
|
Gate-source overlap capacitance
|
|
CGFBO
|
F·m
-1
|
0.0
|
0.0
|
Gate-body overlap capacitance
|
|
RD
|
ohm·m
|
0.0
|
200-1000
|
Specific drain parasitic resistance
|
|
RS
|
ohm·m
|
0.0
|
200-1000
|
Specific source parasitic resistance
|
|
RHOB
|
ohm/sq.
|
0.0
|
30x103
|
Body sheet resistance
|
|
FNK
|
F·A
|
0.0
|
0-10-2
|
Flicker noise coefficient
|
|
FNA
|
-
|
1.0
|
0.5-2
|
Flicker noise exponent
|
Optional Parameters
|
Parameter
|
Unit
|
Default
|
Typical Value
|
Description
|
|
VFBF
|
V
|
calc.
|
-1 (nMOS)
1 (pMOS)
|
Front-gate flatband voltage
|
|
VFBB
|
V
|
calc.
|
-
|
Back-gate flatband voltage
|
|
WKF
|
V
|
calc.
|
~ VFBF
|
Front-gate work function difference
|
|
WKB
|
V
|
calc.
|
-
|
Back-gate work function difference
|
|
TAUO
|
s
|
calc.
|
10-7-10-5
|
Carrier lifetime in lightly doped regions
|
|
BFACT
|
-
|
0.3
|
0.1-0.5
|
V
DS
-averaging factor for mobility degradation
|
|
FVBJT
|
-
|
0.0
|
0-1
|
BJT current directional partitioning factor (0 for lateral 1D flow)
|
|
RHOSD
|
ohm/sq.
|
0.0
|
50
|
Source/drain sheet resistance
|
Notes:
-
The model line must include LEVEL=58 and NFDMOD=0 for FD or NFDMOD=1 for NFD devices.
-
Specifying VFBF turns off the narrow-width effect defined by NQFSW (which can be positive or negative) and the reverse short-channel effect defined by LRSCE (and NBH, or NHALO if specified); the latter effect is also turned off when WKF is specified.
-
For floating-body devices, CGFBO is small and should be specified to be 0.
-
JRO and SEFF influence the gain of the BJT, but LDIFF affects only bipolar charge storage in the source/drain. The BJT gain is influenced by NBH and NHALO (if THALO is specified) as well.
-
The value of TAUO should be loosely correlated with JRO in accord with basic pn-junction recombination/generation properties. Its default value is calculated based on JRO, which is appropriate for short L; for long L, body generation tends to predominate over that in the junctions, and hence TAUO should be specified.
-
The (non-local) impact-ionization model is physical, and its parameters should not be varied arbitrarily.
-
The LDD option intensifies the model, so it is advisable to set LLDD to 0 for large-scale circuit simulation, and add the unbiased LDD resistance to RD; this simplification is foisted when NLDD > 1e19 is specified.
LEVEL 58 Template Output
Some element templates are added to this model for output of state variables, stored charges and capacitor currents.
SOI MOSFET (LEVEL 58)
|
Name
|
Alias
|
Description
|
|
L
|
LV1
|
Channel length (L)
|
|
W
|
LV2
|
Channel width (W)
|
|
AD
|
LV3
|
Area of the drain diode (AD)
|
|
AS
|
LV4
|
Area of the source diode (AS)
|
|
ICVDS
|
LV5
|
Initial condition for drain-source voltage (VDS)
|
|
ICVGS
|
LV6
|
Initial condition for gate-source voltage (VGS)
|
|
ICVES
|
LV7
|
Initial condition for Substrate-source voltage (VES)
|
|
VTH
|
LV9
|
Threshold voltage (bias dependent)
|
|
VDSAT
|
LV10
|
Saturation voltage (VDSAT)
|
|
PD
|
LV11
|
Drain diode periphery (PD)
|
|
PS
|
LV12
|
Source diode periphery (PS)
|
|
RDS
|
LV13
|
Drain resistance (squares) (RDS)
|
|
RSS
|
LV14
|
Source resistance (squares) (RSS)
|
|
GDEFF
|
LV16
|
Effective drain conductance (1/RDeff)
|
|
GSEFF
|
LV17
|
Effective source conductance (1/RSeff)
|
|
VES
|
LX1
|
Substrate-source voltage (VES)
|
|
VGS
|
LX2
|
Gate-source voltage (VGS)
|
|
VDS
|
LX3
|
Drain-source voltage (VDS)
|
|
CDO
|
LX4
|
DC drain current (CDO)
|
|
GMO
|
LX7
|
DC gate transconductance (GMO)
|
|
GDSO
|
LX8
|
DC drain-source conductance (GDSO)
|
|
GMESO
|
LX9
|
DC substrate transconductance (GMBSO)
|
Meyer and Charge Conservation Model Parameters
|
Name
|
Alias
|
Description
|
|
QB
|
LX12
|
Body charge (QB)
|
|
CQB
|
LX13
|
Body charge current (CQB)
|
|
QG
|
LX14
|
Gate charge (QG)
|
|
CQG
|
LX15
|
Gate charge current (CQG)
|
|
QD
|
LX16
|
Channel charge (QD)
|
|
CQD
|
LX17
|
Channel charge current (CQD)
|
|
CGGBO
|
LX18
|
= CGS + CGD + CGB
|
|
CGDBO
|
LX19
|
, (for Meyer CGD=-CGDBO)
|
|
CGSBO
|
LX20
|
, (for Meyer CGS=-CGSBO)
|
|
CBGBO
|
LX21
|
, (for Meyer CGB=-CBGBO)
|
|
CBDBO
|
LX22
|
|
|
CBSBO
|
LX23
|
|
|
CDGBO
|
LX32
|
|
|
CDDBO
|
LX33
|
|
|
CDSBO
|
LX34
|
|
|
QE
|
LX35
|
Substrate charge (QE)
|
|
CQE
|
LX36
|
Substrate charge current (CQE)
|
|
VBS
|
LX43
|
Body-source voltage (VBS)
|
|
ICH
|
LX44
|
Channel current
|
|
IBJT
|
LX45
|
Parasitic BJT collector current
|
|
III
|
LX46
|
Impact ionization current
|
|
IGIDL
|
LX47
|
GIDL current
|
|
ITUN
|
LX48
|
Tunneling current
|
Star-Hspice Manual - Release 2001.2 - June 2001
