Mxxx

SOI MOSFET element name. Must begin with M, which can be followed by up to 1023 alphanumeric characters.

nd

Drain terminal node name or number

ng

Front gate node name or number

ns

Source terminal node name or number

ne

Back gate (or substrate) node name or number

np

External body contact node name or number

nb

Internal body node name or number

nT

Temperature node name or number

mname

MOSFET model name reference

L

SOI MOSFET channel length in meters. This parameter overrides DEFL in an OPTIONS statement. Default=DEFL with a maximum of 0.1m.

W

MOSFET channel width in meters. This parameter overrides DEFW in an OPTIONS statement. Default=DEFW.

M

Multiplier to simulate multiple SOI MOSFETs in parallel. All channel widths, diode leakages, capacitances and resistances are affected by the setting of M. Default=1.

AD

Drain diffusion area. Overrides DEFAD in the OPTIONS statement. Default=DEFAD.

AS

Source diffusion area. Overrides DEFAS in the OPTIONS statement. Default=DEFAS.

PD

Perimeter of the drain junction, including the channel edge. Overrides DEFPD in the OPTIONS statement.

PS

Perimeter of the source junction, including the channel edge. Overrides DEFPS in the OPTIONS statement.

NRD

Number of squares of drain diffusion for drain series resistance. Overrides DEFNRD in the OPTIONS statement.

NRS

Number of squares of source diffusion for source series resistance. Overrides DEFNRS in the OPTIONS statement.

NRB

Number of squares for body series resistance.

FRBODY

Coefficient of distributed body resistance effects

default = 1.0

RTH0

Thermal resistance per unit width

• If not specified, RTH0 is extracted from the model card.
• If specified, it will override the one in the model card.

CTH0

Thermal capacitance per unit width

• If not specified, CTH0 is extracted from model card.
• If specified, it will override the one in the model card.

NBC

Number of body contact isolation edge

NSEG

Number of segments for channel width partitioning

PDBCP

Parasitic perimeter length for the body contact at drain side

PSBCP

Parasitic perimeter length for the body contact at source side

AGBCP

Parasitic gate-to-body overlap area for body contact

AEBCP

Parasitic body-to-substrate overlap area for body contact

VBSUSR

Optional initial value of Vbs specified by user for transient analysis

TNODEOUT

Temperature node flag indicating the usage of T node

OFF

Sets initial condition to OFF for this element in DC analysis

BJTOFF

Turning off BJT if equal to 1

IC

Initial guess in the order (drain, front gate, internal body, back gate, external voltage). (Vps will be ignored in the case of 4-terminal device) These are used when UIC is present in the .TRAN statement and are overridden by the .IC statement.

LEVEL

-

-

LEVEL 57 for BSIM3SOI

SHMOD

-

0

Flag for self-heating:

0 - no self-heating
1 - self-heating

MOBMOD

-

1

Mobility model selector

capmod

-

2

Flag for the short channel capacitance model

noimod

-

1

Flag for noise model

Tsi

m

1.0e-7

Silicon film thickness

Tbox

m

3.0e-7

Buried oxide thickness

Tox

m

1.0e-8

Gate oxide thickness

Xj

m

-

S/D junction depth

Nch

1/cm3

1.7e17

Channel doping concentration

Nsub

1/cm3

6.0e16

Substrate doping concentration

Ngate

1/cm3

0

Poly gate doping concentration

vth0

v

NMOS 0.7
PMOS -0.7

Threshold voltage @ Vbs=0 for long wide device

k1

V1/2

0.6

First-order body effect coefficient

k1w1

m

0

First-order effect width dependent parameter

k1w2

m

0

Second-order effect width dependent parameter

k2

-

0

Second-order body effect coefficient

k3

-

0

Narrow coefficient

k3b

1/V

0

Body effect coefficient of k3

kb1

-

1

Backgate body charge coefficient

w0

m

0

Narrow width parameter

nlx

m

1.74e-7

Lateral non-uniform doping parameter

Dvt0

-

2.2

First coefficient of short-channel effect on Vth

dvt1

-

0.53

Second coefficient of short-channel effect on Vth

dvt2

1/V

-0.032

Body-bias coefficient of short-channel effect on Vth

dvt0w

-

0

First coefficient of narrow width effect on Vth for small channel length

dvt1w

-

5.3e6

Second coefficient of narrow width effect on Vth for small channel length

dvt2w

1/V

-0.032

Body-bias coefficient of narrow width effect on Vth for small channel length

u0

cm2/(V-sec)

NMOS-670 PMOS-250

Mobility at Temp=Tnom

ua

m/V

2.25e-9

First-order mobility degradation coefficient

ub

(m/V)2

5.87e-19

Second-order mobility degradation coefficient

uc

1/V

-0.0465

Body-effect of mobility degradation coefficient

vsat

m/sec

8e4

Saturation velocity at Temp=Tnom

a0

-

1.0

Bulk charge effect coefficient for channel length

ags

1/V

0.0

Gate bias coefficient of Abulk

b0

m

0.0

Bulk charge effect coefficient for channel width

b1

m

0.0

Bulk charge effect width offset

keta

1/V

-0.6

Body-bias coefficient of bulk charge effect

Ketas

V

0.0

Surface potential adjustment for bulk charge effect

A1

1/V

0.0

First non-saturation effect parameter

A2

-

1.0

Second non-saturation effect parameter

rdsw

100

Parasitic resistance per unit width

prwb

1/V1

0

Body effect coefficient of Rdsw

prwg

1/V1/2

0

Gate bias effect coefficient of Rdsw

wr

-

1

Width offset from Weff for Rds calculation

nfactor

-

1

Subthreshold swing factor

wint

m

0.0

Width offset fitting parameter from I-V without bias

lint

m

0.0

Length offset fitting parameter from I-V without bias

dwg

m/V

0.0

Coefficient of Weff's gate dependence

dwb

m/V1/2

0.0

Coefficient of Weff's substrate body bias dependence

dwbc

m

0.0

Width offset for body contact isolation edge

voff

v

-0.08

Offset voltage in the subthreshold region for large W and L

eta0

-

0.08

DIBL coefficient in the subthreshold region

etab

1/V

-0.07

Body-bias coefficient for the subthreshold DIBL effect

dsub

-

0.56

DIBL coefficient exponent

cit

F/m2

0.0

Interface trap capacitance

cdsc

F/m2

2.4e-4

Drain/source to channel coupling capacitance

cdscb

F/m2

0

Body-bias sensitivity of cdsc

cdscd

F/m2

0

Drain-bias sensitivity of cdsc

pclm

-

1.3

Channel length modulation parameter

PDIBLC1

-

0.39

First output resistance DIBL effect correction parameter

pdiblc2

-

0.0086

Second output resistance DIBL effect correction parameter

drout

-

0.56

L dependence coefficient of the DIBL correction parameter in Rout

pvag

-

0.0

Gate dependence of Early voltage

delta

-

0.01

Effective Vds parameter

alpha0

m/V

0.0

The first parameter of impact ionization current

fbjtii

-

0.0

Fraction of bipolar current affecting the impact ionization

beta0

1/V

0.0

First Vds dependence parameter of impact ionization current

beta1

-

0.0

Second Vds dependence parameter of impact ionization current

beta2

V

0.1

Third Vds dependence parameter of impact ionization current

vdsatii0

V

0.9

Nominal drain saturation voltage at threshold for impact ionization current

tii

-

0

Temperature dependence parameter for impact ionization current

lii

-

0

Channel length dependence parameter for impact ionization current

esati

V/m

1.e7

Saturation channel electric field for impact ionization current

sii0

1/V

0.5

First Vgs dependence parameter for impact ionization current

sii1

1/V

0.1

Second Vgs dependence parameter for impact ionization current

sii2

1/V

0

Third Vgs dependence parameter for impact ionization current

siid

1/V

0

Vds dependence parameter of drain saturation voltage for impact ionization current

Agidl

1/W

0.0

GIDL constant

Bgidl

V/m

0.0

GIDL exponential coefficient

Ngidl

V

1.2

GIDL Vds enhancement coefficient

Ntun

-

10.0

Reverse tunneling non-ideality factor

NdioDE

-

1.0

Diode non-ideality factor

Nrecf0

-

2.0

Recombination non-ideality factor at forward bias

Nrecr0

-

10

Recombination non-ideality factor at reversed bias

Isbjt

A/m2

1.0e-6

BJT injection saturation current

Isdif

A/m2

0

Body to source/drain injection saturation current

Isrec

A/m2

1.0e-5

Recombination in depletion saturation current

Istun

A/m2

0.0

Reverse tunneling saturation current

Ln

m

2.0e-6

Electron/hole diffusion length

Vrec0

V

0.0

Voltage dependent parameter for recombination current

Vtun0

V

0.0

Voltage dependent parameter for tunneling current

Nbjt

-

1

Power coefficient of channel length dependency for bipolar current

Lbjt0

m

0.2e-6

Reference channel length for bipolar current

Vabjt

V

10

Early voltage for bipolar current

Aely

V/m

0

Channel length dependency of early voltage for bipolar current

Ahli

-

0

High-level injection parameter for bipolar current

Rbody

ohm/m2

0.0

Intrinsic body contact sheet resistance

Rbsh

ohm/m2

0.0

Extrinsic body contact sheet resistance

rsh

ohm/square

0.0

Source/drain sheet resistance in ohm per square

VEVB

v

0.075v

Electron tunneling from the valence band

VECB

v

0.026v

Electron tunneling from conduction band

xpart

-

0

Charge partitioning rate flag

cgso

F/m

calculated

Non LDD region source-gate overlap capacitance per channel length

cgdo

F/m

0

Non LDD region drain-gate overlap capacitance per channel length

CGEO

F/m

0

Gate substrate overlap capacitance per unit channel length

cjswg

F/m2

1.e-10

Source/drain (gate side) sidewall junction capacitance per unit width (normalized to 100nm Tsi)

pbswg

V

0.7

Source/drain (gate side) sidewall junction capacitance built in potential

mjswg

V

0.5

Source/drain (gate side) sidewall junction capacitance grading coefficient

tt

second

1ps

Diffusion capacitance transit time coefficient

Ndif

-

-1

Power coefficient of channel length dependency for diffusion capacitance

Ldif0

-

1

Channel length dependency coefficient of diffusion cap.

vsdfb

V

cal.

Source/drain bottom diffusion capacitance flatband voltage

vsdth

V

cal.

Source/drain bottom diffusion capacitance threshold voltage

csdmin

V

cal.

Source/drain bottom diffusion minimum capacitance

asd

V

0.3

Source/drain bottom diffusion smoothing parameter

csdesw

F/m

0.0

Source/drain sidewall fringing capacitance per unit length

cgsl

F/m

0.0

Lightly doped source-gate region overlap capacitance

cgdl

F/m

0.0

Lightly doped drain-gate region overlap capacitance

ckappa

F/m

0.6

Coefficient for lightly doped region overlap capacitance fringing field capacitance

cf

F/m

cal.

Gate to source/drain fringing field capacitance

clc

m

0.1e-7

Constant term for the short channel model

cle

-

0.0

Exponential term for the short channel model

dlc

m

lint

Length offset fitting parameter for gate charge

dlcb

m

lint

Length offset fitting parameter for body charge

dlbg

m

0

Length offset fitting parameter for backgate charge

dwc

m

wint

Width offset fitting parameter from C-V

delvt

V

0.0

Threshold voltage adjust for C-V

fbody

-

1.0

Scaling factor for body charge

acde

m/V

1.0

Exponential coefficient for charge thickness in CapMod=3 for accumulation and depletion regions

moin

V1/2

15.0

Coefficient for the gate-bias dependent surface potential

tnom

oC

25

Temperature at which parameters are expected

ute

-

-1.5

Mobility temperature exponent

kt1

V

-0.11

Temperature coefficient for the threshold voltage

ktil

V*m

0

Channel length dependence of the temperature coefficient for the threshold voltage

kt2

-

0.022

Body-bias coefficient of the threshold voltage temperature effect

ua1

m/V

4.31e-9

Temperature coefficient for Ua

ub1

(m/V)2

-7.61e-18

Temperature coefficient for Ub

uc1

1/V

-0.056

Temperature coefficient for Uc

at

m/sec

3.3e4

Temperature coefficient for Ua

tcjswg

1/K

0

Temperature coefficient of Cjswg

tpbswg

V/K

0

Temperature coefficient of Pbswg

cth0

moC/(W*s)

0

Normalized thermal capacity

prt

-um

0

Temperature coefficient for Rdsw

rth0

moC/W

0

Normalized thermal resistance

Ntrecf

-

0

Temperature coefficient for Nrecf

Ntrecr

-

0

Temperature coefficient for Nrecr

xbjt

-

1

Power dependence of jbjt on temperature

xdif

-

XBJT

Power dependence of jdif on temperature

xrec

-

1

Power dependence of jrec on temperature

xtun

-

0

Power dependence of jtun on temperature

L

LV1

Channel length (L)

W

LV2

Channel width (W)

AD

LV3

Area of the drain diode (AD)

AS

LV4

Area of the source diode (AS)

ICVDS

LV5

Initial condition for drain-source voltage (VDS)

ICVGS

LV6

Initial condition for gate-source voltage (VGS)

ICVES

LV7

Initial condition for Substrate-source voltage (VES)

VTH

LV9

Threshold voltage (bias dependent)

VDSAT

LV10

Saturation voltage (VDSAT)

PD

LV11

Drain diode periphery (PD)

PS

LV12

Source diode periphery (PS)

RDS

LV13

Drain resistance (squares) (RDS)

RSS

LV14

Source resistance (squares) (RSS)

GDEFF

LV16

Effective drain conductance (1/RDeff)

GSEFF

LV17

Effective source conductance (1/RSeff)

COVLGS

LV36

Gate-source overlap capacitance

COVLGD

LV37

Gate-drain overlap capacitance

COVLGE

LV38

Gate-substrate overlap capacitance

VES

LX1

Substrate-source voltage (VES)

VGS

LX2

Gate-source voltage (VGS)

VDS

LX3

Drain-source voltage (VDS)

CDO

LX4

DC drain current (CDO)

CBSO

LX5

DC source-body diode current (CBSO)

CBDO

LX6

DC drain-body diode current (CBDO)

GMO

LX7

DC gate transconductance (GMO)

GDSO

LX8

DC drain-source conductance (GDSO)

GMESO

LX9

DC substrate transconductance (GMBSO)

GBDO

LX10

Conductance of the drain diode (GBDO)

GBSO

LX11

Conductance of the source diode (GBSO)

QB

LX12

Body charge (QB)

CQB

LX13

Body charge current (CQB)

QG

LX14

Gate charge (QG)

CQG

LX15

Gate charge current (CQG)

QD

LX16

Channel charge (QD)

CQD

LX17

Channel charge current (CQD)

CGGBO

LX18

= CGS + CGD + CGB

CGDBO

LX19

,
(for Meyer CGD=-CGDBO)

CGSBO

LX20

,
(for Meyer CGS=-CGSBO)

CBGBO

LX21

,
(for Meyer CGB=-CBGBO)

CBDBO

LX22

CBSBO

LX23

CDGBO

LX32

CDDBO

LX33

CDSBO

LX34

QE

LX35

Substrate charge (QE)

CQE

LX36

Substrate charge current (CQE)

CDEBO

LX37

CBEBO

LX38

CEEBO

LX39

CEGBO

LX40

CEDBO

LX41

CESBO

LX42

VBS

LX43

Body-source voltage (VBS)

ICH

LX44

Channel current

IBJT

LX45

Parasitic BJT collector current

III

LX46

Impact ionization current

IGIDL

LX47

GIDL current

ITUN

LX48

Tunneling current