LEVEL 50 Philips MOS9 Model
The Philips MOS Model 9, LEVEL 902, is available as LEVEL 50 in Star-Hspice (based on the "Unclassified Report NL-UR 003/94" by R.M.D.A. Velghe, D.B.M. Klaassen, and F.M. Klaassen).
The model has been installed in its entirety, except for the gate noise current.
The Star-Hspice ACM Parasitic Diode Model, using parameters JS, JSW, N, CJ, CJSW, CJGATE, MJ, MJSW, PB, PHP, ACM, and HDIF, has been added. The older parameter IS is not used. The Philips JUNCAP Parasitic Diode Model was added to the Star-Hspice, 99.2 Release. The model parameter JUNCAP=1 selects the JUNCAP Model, JUNCAP=0 (default) selects the Hspice ACM Model. For additional information regarding the MOS Model-9 please see
http://www-us.semiconductors.com/Philips_Models.
LEVEL 50 Model Parameters
|
Name
|
Unit
|
Default (N)
|
Default (P)
|
Description
|
|
LER
|
m
|
1.1e-6
|
1.25e-6
|
Reference Leff
|
|
WER
|
m
|
20.0e-6
|
20.0e-6
|
Reference Weff
|
|
LVAR
|
m
|
-220.0e-9
|
-460.0e-9
|
Variation in gate length
|
|
LAP
|
m
|
100.0e-9
|
25.0e-9
|
Lateral diffusion per side
|
|
WVAR
|
m
|
-25.0e-9
|
-130.0e-9
|
Variation in active width
|
|
WOT
|
m
|
0.0
|
0.0
|
Channel-stop diffusion per side
|
|
TR
|
°C
|
21.0
|
21.0
|
Reference temperature for model
|
|
VTOR
|
V
|
730.0e-3
|
1.1
|
Threshold voltage at zero bias
|
|
STVTO
|
V/K
|
-1.2e-3
|
-1.7e-3
|
Temperature dependence of VTO
|
|
SLVTO
|
Vm
|
-135.0e-9
|
35.0e-9
|
Length dependence of VTO
|
|
SL2VTO
|
Vm
2
|
0.0
|
0.0
|
Second length dependence of VTO
|
|
SWVTO
|
Vm
|
130.0e-9
|
50.0e-9
|
Width dependence of VTO
|
|
KOR
|
V
-1/2
|
650.0e-3
|
470.0e-3
|
Low-back-bias body factor
|
|
SLKO
|
V
-1/2
m
|
-130.0e-9
|
-200.0e-9
|
Length dependence of KO
|
|
SWKO
|
V
-1/2
m
|
2.0e-9
|
115.0e-9
|
Width dependence of KO
|
|
KR
|
V
-1/2
|
110.0e-3
|
470.0e-3
|
High-back-bias body factor
|
|
SLK
|
V
-1/2
m
|
-280.0e-9
|
-200.0e-9
|
Length dependence of K
|
|
SWK
|
V
-1/2
m
|
275.0e-9
|
115.0e-9
|
Width dependence of K
|
|
PHIBR
|
V
|
650.0e-3
|
650.0e-3
|
Strong inversion surface potential
|
|
VSBXR
|
V
|
660.0e-3
|
0.0
|
Transition voltage for dual-k-factor model
|
|
SLVSBX
|
Vm
|
0.0
|
0.0
|
Length dependence of VSBX
|
|
SWVSBX
|
Vm
|
-675.0e-9
|
0.0
|
Width dependence of VSBX
|
|
BETSQ
|
AV
-2
|
83.0e-6
|
26.1e-6
|
Gain factor of infinite square transistor
|
|
ETABET
|
-
|
1.6
|
1.6
|
Exponent of temperature dependence of gain factor
|
|
THE1R
|
V
-1
|
190.0e-3
|
190.0e-3
|
Gate-induced mobility reduction coefficient
|
|
STTHE1R
|
V
-1
/K
|
0.0
|
0.0
|
Temperature dependence coefficient of THE1R
|
|
SLTHE1R
|
V
-1
m
|
140.0e-9
|
70.0e-9
|
Length dependence coefficient of THE1R
|
|
STLTHE1
|
V
-1
m/K
|
0.0
|
0.0
|
Temperature dependence of, length dependence of THE1R
|
|
SWTHE1
|
V
-1
m
|
-58.0e-9
|
-80.0e-9
|
Width dependence coefficient of THE1R
|
|
THE2R
|
V
-1/2
|
12.0e-3
|
165.0e-3
|
Back-bias induced mobility reduction coefficient
|
|
STTHE2R
|
V
-1/2
/K
|
0.0
|
0.0
|
Temperature dependence coefficient of THE2R
|
|
SLTHE2R
|
V
-1/2
m
|
-33.0e-9
|
-75.0e-9
|
Length dependence coefficient of THE2R
|
|
STLTHE2
|
V
-1/2
m/K
|
0.0
|
0.0
|
Temperature dependence of, length dependence of THE2R
|
|
SWTHE2
|
V
-1/2
m
|
30.0e-9
|
20.0e-9
|
Width dependence coefficient of THE2R
|
|
THE3R
|
V
-1
|
145.0e-3
|
27.0e-3
|
Lateral field induced mobility reduction coefficient
|
|
STTHE3R
|
V
-1
/K
|
-660.0e-6
|
0.0
|
Temperature dependence coefficient of THE3R
|
|
SLTHE3R
|
V
-1
m
|
185.0e-9
|
27.0e-9
|
Length dependence coefficient of THE3R
|
|
STLTHE3
|
V
-1
m/K
|
-620.0e-12
|
0.0
|
Temperature dependence of, length dependence of THE3R
|
|
SWTHE3
|
V
-1
m
|
20.0e-9
|
11.0e-9
|
Width dependence coefficient of THE3R
|
|
GAM1R
|
-
|
145.0e-3
|
77.0e-3
|
Drain-induced threshold shift coefficient, for high gate drive
|
|
SLGAM1
|
-
|
160.0e-9
|
105.0e-9
|
Length dependence of GAM1R
|
|
SWGAM1
|
-
|
-10.0e-9
|
-11.0e-9
|
Width dependence of GAM1R
|
|
ETADSR
|
-
|
600.0e-3
|
600.0e-3
|
Exponent of drain dependence of GAM1R
|
|
ALPR
|
-
|
3.0e-3
|
44.0e-3
|
Channel length modulation factor
|
|
ETAALP
|
-
|
150.0e-3
|
170.0e-3
|
Exponent of length dependence of ALPR
|
|
SLALP
|
-
|
-5.65e-3
|
9.0e-3
|
Coefficient of length dependence of ALPR
|
|
SWALP
|
m
|
1.67e-9
|
180.0e-12
|
Coefficient of width dependence of ALPR
|
|
VPR
|
V
|
340.0e-3
|
235.0e-3
|
Characteristic voltage for channel length modulation
|
|
GAMOOR
|
-
|
18.0e-3
|
7.0e-3
|
Drain-induced threshold shift coefficient, at zero gate drive, and zero back-bias
|
|
SLGAMOO
|
m
2
|
20.0e-15
|
11.0e-15
|
Length dependence of GAMOOR
|
|
ETAGAMR
|
-
|
2.0
|
1.0
|
Exponent of back-bias dependence of zero gate-drive, drain-induced threshold shift
|
|
MOR
|
-
|
500.0e-3
|
375.0e-3
|
Subthreshold slope factor
|
|
STMO
|
K
-1
|
0.0
|
0.0
|
Temperature dependence coefficient of MOR
|
|
SLMO
|
m
1/2
|
280.0e-6
|
47.0e-6
|
Length dependence coefficient of MOR
|
|
ETAMR
|
-
|
2.0
|
1.0
|
Exponent of back-bias dependence of subthreshold slope
|
|
ZET1R
|
-
|
420.0e-3
|
1.3
|
Weak-inversion correction factor
|
|
ETAZET
|
-
|
170.0e-3
|
30.0e-3
|
Exponent of length dependence of ZET1R
|
|
SLZET1
|
-
|
-390.0e-3
|
-2.8
|
Length dependence coefficient of ZET1R
|
|
VSBTR
|
V
|
2.1
|
100.0
|
Limiting voltage for back-bias dependence
|
|
SLVSBT
|
Vm
|
-4.4e-6
|
0.0
|
Length dependence of VSBTR
|
|
A1R
|
-
|
6.0
|
10.0
|
Weak-avalanche current factor
|
|
STA1
|
K
-1
|
0.0
|
0.0
|
Temperature coefficient of A1R
|
|
SLA1
|
m
|
1.3e-6
|
-15.0e-6
|
Length dependence of A1R
|
|
SWA1
|
m
|
3.0e-6
|
30.0e-6
|
Width dependence of A1R
|
|
A2R
|
V
|
38.0
|
59.0
|
Exponent of weak-avalanche current
|
|
SLA2
|
Vm
|
1.0e-6
|
-8.0e-6
|
Length dependence of A2R
|
|
SWA2
|
Vm
|
2.0e-6
|
15.0e-6
|
Width dependence of A2R
|
|
A3R
|
-
|
650.0e-3
|
520.0e-3
|
Factor of minimum drain bias above which avalanche sets in
|
|
SLA3
|
m
|
-550.0e-9
|
-450.0e-9
|
Length dependence of A3R
|
|
SWA3
|
m
|
0.0
|
-140.0e-9
|
Width dependence of A3R
|
|
TOX
|
m
|
25.0e-9
|
25.0e-9
|
Oxide thickness
|
|
COL
|
F/m
|
320.0e-12
|
320.0e-12
|
Gate overlap capacitance per unit width
|
|
WDOG
|
m
|
0
|
0
|
Characteristic drawn gate width below which dogboning appears
|
|
FTHE1
|
-
|
0
|
0
|
Coefficient describing the width dependence of THE1 for W < WDOG
|
|
NFMOD
|
|
0
|
|
Flicker noise selector
0 selects old flicker noise model added in release 98.4
|
|
NTR
|
J
|
24.4e-21
|
21.1e-21
|
Thermal noise coefficient
|
|
NFR
|
V
2
|
70.0e-12
|
21.4e-12
|
Flicker noise coefficient
|
|
NFAR
|
V-1m-2
|
7.15e+22
|
1.53xe+22
|
1st flicker noise coefficient added in release 98.4
|
|
NFBR
|
V-1m-2
|
2.16e+06
|
4.06e+06
|
2nd flicker noise coefficient added in release 98.4
|
|
NFCR
|
V-1
|
0.0
|
2.92e-10
|
3rd flicker noise coefficient added in release 98.4
|
|
SL3VTO
|
V
|
0
|
0
|
Third coefficient of the length dependence of V
TO
|
|
SL2KO
|
V
1/2
m
2
|
0
|
0
|
Second coefficient of the length dependence of K
0
|
|
SL2K
|
V
1/2
m
2
|
0
|
0
|
Second coefficient of the length dependence of K
|
|
LP1
|
M
|
1E-6
|
1E-6
|
Characteristic length of first profile
|
|
FBET1
|
-
|
0
|
0
|
Relative mobility decrease due to first profile
|
|
LP2
|
M
|
1E-8
|
1E-8
|
Characterisitc length of second profile
|
|
FBET2
|
-
|
0
|
0
|
Relative mobility decrease due to second profile
|
|
GTHE1
|
-
|
0
|
0
|
Parameter that selects either the old (=0) or the new(=1) scaling rule of 
|
|
SL2GAMOO
|
-
|
0
|
0
|
Second coefficient of the length dependence 
|
JUNCAP Model Parameters
|
Name
|
Unit
|
Default
|
Description
|
|
JUNCAP
|
-
|
0
|
JUNCAP flag: 0-off, 1-on
|
|
DTA
|
oc
|
0.0
|
Temperature offset of the JUNCAP element with respect to TA
|
|
VR
|
V
|
0.0
|
Voltage at which the parameters have been determined
|
|
JSGBR
|
A*m-2
|
1.00e-3
|
Bottom saturation-current density due to electron-hole generation at V=VR
|
|
JSDBR
|
A*m-2
|
1.00e-3
|
Bottom saturation-current density due to diffusion from back contact
|
|
JSGSR
|
A*m-1
|
1.00e-3
|
Sidewall saturation-current density due to electron-hole generation at V=VR
|
|
JSDSR
|
A*m-1
|
1.00e-3
|
Sidewall saturation-current density due to diffusion from back contact
|
|
JSGGR
|
A*m-1
|
1.00e-3
|
Gate edge saturation-current density due to electron-hole generation at V=VR
|
|
JSDGR
|
A*m-1
|
1.00e-3
|
Gate edge saturation-current density due to diffusion from back contact
|
|
NB
|
-
|
1.00
|
Emission coefficient of the bottom forward current
|
|
NS
|
-
|
1.00
|
Emission coefficient of the sidewall forward current
|
|
NG
|
-
|
1.00
|
Emission coefficient of the gate edge forward current
|
|
CJBR
|
F*m-2
|
1.00e-12
|
Bottom junction capacitance at V=VR
|
|
CJSR
|
F*m-1
|
1.00e-12
|
Sidewall junction capacitance at V=VR
|
|
CJGR
|
F*m-1
|
1.00e-12
|
Gate edge junction capacitance at V=VR
|
|
VDBR
|
v
|
1.00
|
Diffusion voltage of the bottom junction at T=TR
|
|
VDSR
|
v
|
1.00
|
Diffusion voltage of the sidewall junction at T=TR
|
|
VDGR
|
v
|
1.00
|
Diffusion voltage of the gate edge junction at T=TR
|
|
PB
|
-
|
0.40
|
Bottom-junction grading coefficient
|
|
PS
|
-
|
0.40
|
Sidewall-junction grading coefficient
|
|
PG
|
-
|
0.40
|
Gate edge-junction grading coefficient
|
Using the Philips MOS9 Model in Star-Hspice
1. Set LEVEL=50 to identify the model as the Philips MOS Model 9.
2. The default room temperature is 25
o
C in Star-Hspice, but is 27
o
C in most other simulators. When comparing to other simulators, set the simulation temperature to 27 with .TEMP 27 or with .OPTION TNOM=27.
3. The model parameter set should always include the model reference temperature, TR, which corresponds to TREF in other levels in Star-Hspice. The default for TR is 21.0
o
C, to match the Philips simulator.
4. The model has its own charge-based capacitance model. The CAPOP parameter, which selects different capacitance models, is ignored for this model.
5. The model uses analytical derivatives for the conductances. The DERIV parameter, which selects the finite difference method, is ignored for this model.
6. DTEMP can be used with this model. It is set on the element line and increases the temperature of individual elements relative to the circuit temperature.
7. Since defaults are nonzero, it is strongly recommended that every model parameter listed in LEVEL 50 Model Parameters table be set in the .MODEL statement.
8. Use the model parameter JUNCAP to select one of two available parasitic junction diode models, ACM and JUNCAP. JUNCAP=1 selects the Philips JUNCAP model, JUNCAP=0 (default) selects the Star-Hspice ACM model. The JUNCAP model is available in the Star-Hspice release, version 1999.2 (June 1999).
Star-Hspice Model Statement
Example
This is an example of the Star-Hspice model statement.
.model nch nmos LEVEL=50
+ ler = 1e-6 wer = 10e-6
+ lvar = 0.0 lap = 0.05e-6
+ wvar = 0.0 wot = 0.0
+ tr = 27.00
+ vtor = 0.8 stvto = 0 slvto = 0 sl2vto= 0
+ swvto = 0
+ kor = 0.7 slko = 0 swko = 0
+ kr = 0.3 slk = 0 swk = 0
+ phibr = 0.65
+ vsbxr = 0.5 slvsbx = 0 swvsbx= 0
+ betsq = 120e-6
+ etabet = 1.5
+ the1r = 0.3
+ stthe1r = 0 slthe1r = 0 stlthe1= 0 swthe1 = 0
+ the2r = 0.06
+ stthe2r = 0 slthe2r = 0 stlthe2 = 0 swthe2 = 0
+ the3r = 0.1
+ stthe3r = 0 slthe3r = 0 stlthe3 = 0 swthe3 = 0
+ gam1r = 0.02 slgam1 = 0 swgam1 = 0
+ etadsr= 0.60
+ alpr = 0.01
+ etaalp = 0 slalp = 0 swalp = 0
+ vpr = 0.4
+ gamoor = 0.006
+ slgamoo = 0
+ etagamr = 2.0
+ mor = 0.5 stmo = 0 slmo = 0
+ etamr = 2.0
+ zet1r = 1.0
+ etazet = 0.5
+ slzet1 = 0
+ vsbtr = 2.5
+ slvsbt = 0
+ a1r = 10 sta1 = 0 sla1 = 0 swa1 = 0
+ a2r = 30 sla2 = 0 swa2 = 0
+ a3r = 0.8 sla3 = 0 swa3 = 0
+ tox = 15.00e-9
+ col = 0.3e-9
+ ntr = 2.0e-20
+ nfr = 5.0e-11
+ acm=2 hdif=1u js=1e-3
+ cj=1e-3 mj=0.5 pb=0.8
+ cjsw=1e-9 cjgate=1e-9 mjsw=0.3 php=0.8
Star-Hspice Manual - Release 2001.2 - June 2001
