VERSION

4.0.0

NA

Model version number

BINUNIT

1

NA

Binning unit selector

PARAMCHK

1

NA

Switch for parameter value check

MOBMOD

1

NA

Mobility model selector

RDSMOD

0

NA

Bias-dependent source/drain resistance model selector

IGCMOD

0

NA

Gate-to-channel tunneling current model selector

IGBMOD

0

NA

Gate-to-substrate tunneling current model selector

CAPMOD

2

NA

Capacitance model selector

RGATEMOD

0 (no gate resistance)

Gate resistance model selector

RBODYMOD

0 (network off)

NA

Substrate resistance network model selector

TRNQSMOD

0

NA

Transient NQS model selector

ACNQSMOD

0

NA

AC small-signal NQS model selector

FNOIMOD

1

NA

Flicker noise model selector

TNOIMOD

0

NA

Thermal noise model selector

DIOMOD

1

NA

Source/drain junction diode IV model selector

PERMOD

1

NA

Whether PS/PD includes the gate-edge perimeter

GEOMOD

0 (isolated)

NA

Geometry-dependent parasitics model selector

RGEOMOD

0

NA

Source/drain diffusion resistance and contact model selector

EPSROX

3.9 (SiO2)

No

Gate dielectric constant relative to vacuum

TOXE

3.0e-9m

No

Electrical gate equivalent oxide thickness

TOXP

TOXE

No

Physical gate equivalent oxide thickness

TOXM

TOXE

No

Tox at which parameters are extracted

DTOX

0.0m

No

Defined as (TOXE-TOXP)

XJ

1.5e-7m

Yes

S/D junction depth

GAMMA1 ( 1 in equation)

calculated
(V 1/2 )

Yes

Body-effect coefficient near the surface

GAMMA2 ( 2 in equation)

calculated
(V 1/2 )

Yes

Body-effect coefficient in the bulk

NDEP

1.7e17cm-3

Yes

Channel doping concentration at depletion edge for zero body bias

NSUB

6.0e16cm-3

Yes

Substrate doping concentration

NGATE

0.0cm-3

Yes

Poly Si gate doping concentration

NSD

1.0e20cm-3

Yes

Source/drain doping concentration

VBX

calculated (v)

No

Vbs at which the depletion region width equals XT

XT

1.55e-7m

Yes

Doping depth

RSH

0.0ohm/square

No

Source/drain sheet resistance

RSHG

0.1ohm/square

No

Gate electrode sheet resistance

VTH0 or VTHO

0.7V (NMOS)
-0.7V (PMOS)

Yes

Long-channel threshold voltage at Vbs =0

VFB

-1.0V

Yes

Flat-band voltage PHIN

PHIN

0.0V

Yes

Non-uniform vertical doping effect on surface potential

K1

0.5V1/2

Yes

First-order body bias coefficient

K2

0.0

Yes

Second-order body bias coefficient

K3

80.0

Yes

Narrow width coefficient

K3B

0.0V-1

Yes

Body effect coefficient of K3

W0

2.5e-6m

Yes

Narrow width parameter

LPE0

1.74e-7m

Yes

Lateral non-uniform doping parameter

LPEB

0.0m

Yes

Lateral non-uniform doping effect on K1

VBM

-3.0V

Yes

Maximum applied body bias in VTH0 calculation

DVT0

2.2

Yes

First coefficient of short-channel effect on Vth

DVT1

0.53

Yes

Second coefficient of short-channel effect on Vth

DVT2

-0.032V-1

Yes

Body-bias coefficient of short-channel effect on Vth

DVTP0

0.0m

Yes

First coefficient of drain-induced Vth shift due to for long-channel pocket devices

DVTP1

0.0V-1

Yes

First coefficient of drain-induced Vth shift due to for long-channel pocket devices

DVT0W

0.0

Yes

First coefficient of narrow width effect on Vth for small channel length

DVT1W

5.3e6m-1

Yes

Second coefficient of narrow width effect on Vth for small channel length

DVT2W

-0.032V-1

Yes

Body-bias coefficient of narrow width effect for small channel length

U0

0.067m2/(Vs) (NMOS); 0.025
m2/(Vs) (PMOS)

Yes

Low-field mobility

UA

1.0e-9m/V for MOBMOD=0 and 1; 1.0e-15m/V for MOBMOD=2

Yes

Coefficient of first-order mobility degradation due to vertical field

UB

1.0e-19m2/V2

Yes

Coefficient of second-order mobility degradation due to vertical field

UC

-0.0465V-1 for MOB-MOD=1; -0.0465e-9
m/V2 for MOBMOD=0 and 2

Yes

Coefficient of mobility degradation due to body-bias effect

EU

1.67 (NMOS); 1.0 (PMOS)

No

Exponent for mobility degradation of MOBMOD=2

VSAT

8.0e4m/s

Yes

Saturation velocity

A0

1.0

Yes

Coefficient of channel-length dependence of bulk charge effect

AGS

0.0V-1

Yes

Coefficient of Vgs dependence of bulk charge effect

B0

0.0m

Yes

Bulk charge effect coefficient for channel width

B1

0.0m

Yes

Bulk charge effect width offset

KETA

-0.047V-1

Yes

Body-bias coefficient of bulk charge effect

A1

0.0V-1

Yes

First non-saturation effect parameter

A2

1.0

Yes

Second non-saturation factor

WINT

0.0m

No

Channel-width offset parameter

LINT

0.0m

No

Channel-length offset parameter

DWG

0.0m/V

Yes

Coefficient of gate bias dependence of Weff

DWB

0.0m/V1/2

Yes

Coefficient of body bias dependence of Weff bias dependence

VOFF

-0.08V

Yes

Offset voltage in subthreshold region for large W and L

VOFFL

0.0mV

No

Channel-length dependence of VOFF

MINV

0.0

Yes

Vgsteff fitting parameter for moderate inversion condition

NFACTOR

1.0

Yes

Subthreshold swing factor

ETA0

0.08

Yes

DIBL coefficient in subthreshold region

ETAB

-0.07V -1

Yes

Body-bias coefficient for the subthreshold DIBL effect

DSUB

DROUT

Yes

DIBL coefficient exponent in subthreshold region

CIT

0.0F/m2

Yes

Interface trap capacitance

CDSC

2.4e-4F/m2

Yes

Coupling capacitance between source/drain and channel

CDSCB

0.0F/(Vm2)

Yes

Body-bias sensitivity of CDSC

CDSCD

0.0(F/Vm2)

Yes

Drain-bias sensitivity of DCSC

PCLM

1.3

Yes

Channel-length modulation parameter

PDIBLC1

0.39

Yes

Parameter for DIBL effect on Rout

PDIBLC2

0.0086

Yes

Parameter for DIBL effect on Rout

PDIBLCB

0.0V-1

Yes

Body bias coefficient of DIBL effect on Rout

DROUT

0.56

Yes

Channel-length dependence of DIBL effect on Rout

PSCBE1

4.24e8V/m

Yes

First substrate current induced body-effect parameter

PSCBE2

1.0e-5m/V

Yes

Second substrate current induced body-effect parameter

PVAG

0.0

Yes

Gate-bias dependence of Early voltage

DELTA ( in equation)

0.01V

Yes

Parameter for DC Vdseff

FPROUT

0.0V/m 0.5

Yes

Effect of pocket implant on Rout degradation

PDITS

0.0V-1

Yes

Impact of drain-induced Vth shift on Rout.

PDITSL

0.0m-1

No

Channel-length dependence of drain-induced Vth shift for Rout.

PDITSD

0.0V-1

Yes

Vds dependence of drain-induced Vth shift for Rout

RDSW

200.0 ohm( µ m)WR

Yes

Zero bias LLD resistance per unit width for RDSMOD=0

RDSWMIN

0.0 ohm( µ m)WR

No

LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0

RDW

100.0 ohm( µ m)WR

Yes

Zero bias lightly-doped drain resistance Rd(v) per unit width for RDSMOD=1

RDWMIN

0.0 ohm( µ m)WR

No

Lightly-doped drain resistance per unit width at high Vgs and zero Vbs for RDSMOD=1

RSW

100.0 ohm( µ m)WR

Yes

Zero bias lightly-doped source resistance Rs(V) per unit width for RDSMOD=1

RSWMIN

0.0 ohm( µ m)WR

No

Lightly-doped source resistance per unit width at high Vgs and zero Vbs for RDSMOD=1

PRWG

1.0V-1

Yes

Gate-bias dependence of LDD resistance

PRWB

0.0V-0.5

Yes

Body-bias dependence of LDD resistance

WR

1.0

Yes

Channel-width dependence parameter of LDD resistance

NRS

1.0

No

Number of source diffusion squares

NRD

1.0

No

Number of drain diffusion squares

ALPHA0

0.0Am/V

Yes

First parameter of impact ionization current

ALPHA1

0.0A/V

Yes

Isub parameter for length scaling

BETA0

30.0V

Yes

The second parameter for impact ionization current

AGIDL

0.0ohm

Yes

Pre-exponential coefficient for GIDL

BGIDL

2.3e9V/m

Yes

Exponential coefficient for GIDL

CGIDL

0.5V3

Yes

Parameter for body-bias effect on GIDL

DGIDL

0.8V

Yes

Fitting parameter for band bending for GIDL

AIGBACC

0.43 (F s 2/ g )0.5m-1

Yes

Parameter for Igb in accumulation

BIGBACC

0.054 (F s 2/ g )0.5 m-1V-1

Yes

Parameter for Igb in accumulation

CIGBACC

0.075V-1

Yes

Parameter for Igb in accumulation

NIGBACC

1.0

Yes

Parameter for Igb in accumulation

AIGBINV

0.35 (F s 2/ g )0.5m-1

Yes

Parameter for Igb in inversion

BIGBINV

0.03 (F s 2/ g )0.5m-1V-1

Yes

Parameter for Igb in inversion

CIGBINV

0.0006V-1

Yes

Parameter for Igb in inversion

EIGBINV

1.1V

Yes

Parameter for Igb in inversion

NIGBINV

3.0

Yes

Parameter for Igb in inversion

AIGC

0.054 (NMOS) and 0.31 (PMOS) (F s 2/ g )0.5m-1

Yes

Parameter for Igcs and Igc d

BIGC

0.054 (NMOS) and 0.024 (PMOS) (F s 2/ g )0.5 m-1V-1

Yes

Parameter for Igcs and Igcd

CIGC

0.075 (NMOS) and 0.03(PMOS) V-1

Yes

Parameter for Igcs and Igcd

AIGSD

0.43 (NMOS) and 0.31 (PMOS) (F s 2/ g )0.5 m-1

Yes

Parameter for Igs and Igd

BIGSD

0.054 (NMOS) 0.024 (PMOS) (F s 2/ g )0.5
m-1V-1

Yes

Parameter for Igs and Igd

CIGSD

0.075 (NMOS) and 0.03 (PMOS) V-1

Yes

Parameter for Igs and Igd

DLCIG

LINT

Yes

Source/drain overlap length for Igs and Igd

NIGC

1.0

Yes

Parameter for Igcs , Igcd , Igs and Igd

POXEDGE

1.0

Yes

Factor for the gate oxide thickness in source/drain overlap regions

PIGCD

1.0

Yes

Vds dependence of Igcs and Igcd

NTOX

1.0

Yes

Exponent for the gate oxide ratio

TOXREF

3.0e-9m

No

Nominal gate oxide thickness for gate dielectric tunneling current model only

XPART

0.0

No

Charge partition parameter

CGSO

calculated (F/m)

No

Non LDD region source-gate overlap capacitance per unit channel width

CGDO

calculated (F/m)

No

Non LDD region drain-gate overlap capacitance per unit channel width

CGBO

0.0 (F/m)

No

Gate-bulk overlap capacitance per unit channel length

CGSL

0.0F/m

Yes

Overlap capacitance between gate and lightly-doped source region

CGDL

0.0F/m

Yes

Overlap capacitance between gate and lightly-doped source region

CKAPPAS

0.6V

Yes

Coefficient of bias-dependent overlap capacitance for the source side

CKAPPAD

CKAPPAS

Yes

Coefficient of bias-dependent overlap capacitance for the drain side

CF

calculated (F/m)

Yes

Fringing field capacitance

CLC

1.0e-7m

Yes

Constant term for the short channel model

CLE

0.6

Yes

Exponential term for the short channel model

DLC

LINT (m)

No

Channel-length offset parameter for CV model

DWC

WINT (m)

No

Channel-width offset parameter for CV model

VFBCV

-1.0V

Yes

Flat-band voltage parameter (for CAPMOD=0 only)

NOFF

1.0

Yes

CV parameter in Vgsteff,CV for week to strong inversion

VOFFCV

0.0V

Yes

CV parameter in Vgsteff,CV for week to strong inversion

ACDE

1.0m/V

Yes

Exponential coefficient for charge thickness in CAPMOD=2 for accumulation and depletion regions

MOIN

15.0

Yes

Coefficient for the gate-bias dependent surface potential

XRCRG1

12.0

Yes

Parameter for distributed channel-resistance effect for both intrinsic-input resistance and charge-deficit NQS models

XRCRG2

1.0

Yes

Parameter to account for the excess channel diffusion resistance for both intrinsic input resistance and charge-deficit NQS models

RBPB

50.0ohm

No

Resistance connected between bNodePrime and bNode

RBPD

50.0ohm

No

Resistance connected between bNodePrime and dbNode

RBPS

50.0ohm

No

Resistance connected between bNodePrime and sbNode

RBDB

50.0ohm

No

Resistance connected between dbNode and dbNode

RBSB

50.0ohm

No

Resistance connected between sbNode and bNode

GBMIN

1.0e-12mho

No

Conductance in parallel with each of the five substrate resistances to avoid potential numerical instability due to unreasonably too large a substrate resistance

NOIA

6.25e41 (eV)-1s1-EFm-3 for NMOS; 6.188e40 (eV)-1s1-EFm-3 for PMOS

No

Flicker noise parameter A

NOIB

3.125e26 (eV)-1s1-EFm-1 for NMOS; 1.5e25 (eV)-1s1-EFm-1 for PMOS

No

Flicker noise parameter B

NOIC

8.75 (eV)-1S1-EFm

No

Flicker noise parameter C

EM

4.1e7V/m

No

Saturation field

AF

1.0

No

Flicker noise exponent

EF

1.0

No

Flicker noise frequency exponent

KF

0.0 A2-EFs1-EFF

No

Flicker noise coefficient

NTNOI

1.0

No

Noise factor for short-channel devices for TNOIMOD=0 only

TNOIA

1.5

No

Coefficient of channel-length dependence of total channel thermal noise

TNOIB

3.5

No

Channel-length dependence parameter for channel thermal noise partitioning

DMCG

0.0m

No

Distance from S/D contact center to the gate edge

DMCI

DMCG

No

Distance from S/D contact center to the isolation edge in the channel-length direction

DMDG

0.0m

No

Same as DMCG but for merged device only

DMCGT

0.0m

No

DMCG of test structures

NF

1

No

Number of device figures

DWJ

DWC (in CVmodel)

No

Offset of the S/D junction width

MIN

0

No

Whether to minimize the number of drain or source diffusions for even-number fingered device

XGW

0.0m

No

Distance from the gate contact to the channel edge

XGL

0.0m

No

Offset of the gate length due to variations in patterning

NGCON

1

No

Number of gate contacts

IJTHSREV

IJTHSREV=0.1A

No

Limiting current in reverse bias region

IJTHDREV

IJTHDREV=
IJTHSREV

No

Limiting current in reverse bias region

IJTHSFWD

IJTHSFWD=0.1A

No

Limiting current in forward bias region

IJTHDFWD

IJTHDFWD=
IJTHSFWD

No

Limiting current in forward bias region

XJBVS

XJBVS=1.0

No

Fitting parameter for diode breakdown

XJBVD

XJBVD=XJBVS

No

Fitting parameter for diode breakdown

BVS

BVS=10.0V

No

Breakdown voltage

BVD

BVD=BVS

No

Breakdown voltage

JSS

JSS=1.0e-4A/m2

No

Bottom junction reverse saturation current density

JSD

JSD=JSS

No

Bottom junction reverse saturation current density

JSWS

JSWS=0.0A/m

No

Isolation-edge sidewall reverse saturation current density

JSWD

JSWD=JSWS

No

Isolation-edge sidewall reverse saturation current density

JSWGS

JSWGS=0.0A/m

No

Gate-edge sidewall reverse saturation current density

JSWGD

JSWGD=JSWGS

No

Gate-edge sidewall reverse saturation current density

CJS

CJS=5.0e-4 F/m2

No

Bottom junction capacitance per unit area at zero bias

CJD

CJD=CJS

No

Bottom junction capacitance per unit area at zero bias

MJS

MJS=0.5

No

Bottom junction capacitance grading coefficient

MJD

MJD=MJS

No

Bottom junction capacitance grading coefficient

MJSWS

MJSWS=0.33

No

Isolation-edge sidewall junction capacitance grading coefficient

MJSWD

MJSWD=MJSWS

No

Isolation-edge sidewall junction capacitance grading coefficient

CJSWS

CJSWS=5.0e-10
F/m

No

Isolation-edge sidewall junction capacitance per unit area

CJSWD

CJSWD=CJSWS

No

Isolation-edge sidewall junction capacitance per unit area

CJSWGS

CJSWGS=CJSWS

No

Gate-edge sidewall junction capacitance per unit length

CJSWGD

CJSWGD=CJSWS

No

Gate-edge sidewall junction capacitance per unit length

MJSWGS

MJSWGS=MJSWS

No

Gate-edge sidewall junction capacitance grading coefficient

MJSWGD

MJSWGD=MJSWS

No

Gate-edge sidewall junction capacitance grading coefficient

PBS

PBS=1.0V

No

Bottom junction built-in potential

PBD

PBD=PBS

No

Bottom junction built-in potential

PBSWS

PBSWS=1.0V

No

Isolation-edge sidewall junction built-in potential

PBSWD

PBSWD=PBSWS

No

Isolation-edge sidewall junction built-in potential

PBSWGS

PBSWGS=PBSWS

No

Gate-edge sidewall junction built-in potential

PBSWGD

PBSWGD=PBSWS

No

Gate-edge sidewall junction built-in potential

TNOM

27° C

No

Temperature at which parameters are extracted

UTE

-1.5

Yes

Mobility temperature exponent

KT1

-0.11V

Yes

Temperature coefficient for threshold voltage

KT1L

0.0Vm

Yes

Channel length dependence of the temperature coefficient for threshold voltage

KT2

0.022

Yes

Body-bias coefficient of Vth temperature effect

UA1

1.0e-9m/V

Yes

Temperature coefficient for UA

UB1

-1.0e-18 (m/V 2 )

Yes

Temperature coefficient for UB

UC1

0.067V-1 for MOBMOD=1; 0.025m/V2 for MOBMOD=0 and 2

Yes

Temperature coefficient for UC

AT

3.3e4m/s

Yes

Temperature coefficient for saturation velocity

PRT

0.0ohm-m

Yes

Temperature coefficient for Rdsw

NJS, NJD

NJS=1.0; NJD=NJS

No

Emission coefficients of junction for source and drain junctions, respectively

XTIS, XTID

XTIS=3.0; XTID=XTIS

No

Junction current temperature exponents for source and drain junction, respectively

TPB

0.0V/K

No

Temperature coefficient of PB

TPBSW

0.0V/K

No

Temperature coefficient of PBSW

TPBSWG

0.0V/K

No

Temperature coefficient of PBSWG

TCJ

0.0K-1

No

Temperature coefficient of CJ

TCJSW

0.0K-1

No

Temperature coefficient of CJSW

TCJSWG

0.0K-1

No

Temperature coefficient of CJSWG

WL

0.0mWLN

No

Coefficient of length dependence for width offset

WLN

1.0

No

Power of length dependence of width offset

WW

0.0mWWN

No

Coefficient of width dependence for width offset

WWN

1.0

No

Power of width dependence of width offset

WWL

0.0 mWWN+WLN

No

Coefficient of length and width cross term dependence for width offset

LL

0.0mLLN

No

Coefficient of length dependence for length offset

LLN

1.0

No

Power of length dependence for length offset

LW

0.0mLWN

No

Coefficient of width dependence for length offset

LWN

1.0

No

Power of width dependence for length offset

LWL

0.0 mLWN+LLN

No

Coefficient of length and width cross term dependence for length offset

LLC

LL

No

Coefficient of length dependence for CV channel length offset

LWC

LW

No

Coefficient of width dependence for CV channel length offset

LWLC

LWL

No

Coefficient of length and width cross-term dependence for CV channel length offset

WLC

WL

No

Coefficient of length dependence for CV channel width offset

WWC

WW

No

Coefficient of width dependence for CV channel width offset

WWLC

WWL

No

Coefficient of length and width cross-term dependence for CV channel width offset

LMIN

0.0m

No

Minimum channel length

LMAX

1.0m

No

Maximum channel length

WMIN

0.0m

No

Minimum channel width

WMAX

1.0m

No

Maximum channel width