LEVEL 4 IDS: MOS Model

The LEVEL 4 MOS model is the same as the LEVEL 2 model, with the following exceptions:

• No narrow width effects:

• No short-channel effects:

• For lateral diffusion, LDscaled = LD · XJ · SCALM. The LD default = 0.75 if XJ is specified and 0 if XJ is not specified.
• TPG, the model parameter for type of gate materials, defaults to zero (AL gate). The default is 1 for other levels. This parameter computes VTO if that model parameter is not specified (see Common Threshold Voltage Parameters).