DCAP

The DCAP option selects the equations used in calculating the depletion capacitance for Level 1 and 3 diodes and BJTs. See the individual device model chapters for information concerning the equations used.

MODSRH

If MODSRH=1, Hspice will not load the model and will consider it not referenced when the model is described by .model but does not appear in the netlist. This option will shorten the run time when many models are referenced but not called by an element in the netlist.

The default value is MODSRH=0. If MODSRH=1, then the read-in time will increase slightly.

example.sp:

* modsrh used incorrectly

.option post modsrh=1

xi1 net8 b c t6

xi0 a b net8 t6

v1 a 0 pulse 3.3 0.0 10E-6 1E-9 1E-9 25E-6 50E-6

v2 b 0 2

v3 c 0 3

.model nch nmos level=49 version=3.2

.end

This input file will search for t6.inc automatically. If the model nch is used in t6.inc and MODSRH is set to 1, then Hspice will not load nch . Do not set MODSRH=1 in this type of included file call. Use this option in front of the .model card definition. This will be improved in the next release.

SCALE

Element scaling factor. This option will scale parameters used in element cards by its value. The default value equals 1.

TNOM

The reference temperature for the simulation. This is the temperature at which component derating is zero. The default is 25 degrees Celsius, or if .OPTION SPICE is enabled the default is 27 degrees Celsius.

CVTOL

Changes the number of numerical integration steps in the calculation of the gate capacitor charge for a MOSFET using CAPOP = 3. See the discussion of CAPOP = 3 in the chapter 18 for explicit equations and discussion.

DEFAD

Default value for MOSFET drain diode area. The default value equals 0.

DEFAS

Default value for MOSFET source diode area. The default value equals 0.

DEFL

Default value for MOSFET channel length. The default value equals 1e-4m.

DEFNRD

Default value for the number of squares for the drain resistor on a MOSFET. The default value equals 0.

DEFNRS

Default value for the number of squares for the source resistor on a MOSFET. The default value equals 0.

DEFPD

Default value for MOSFET drain diode perimeter. The default value equals 0.

DEFPS

Default value for MOSFET source diode perimeter. The default value equals 0.

DEFW

Default value for MOSFET channel width. The default value equals 1e-4m.

SCALM

Model scaling factor. This option will scale parameters defined in device model cards by its value. The default value equals 1. See the individual device model chapters for information about which parameters are scaled.

WL

This option changes the order of specifying MOS element VSIZE from the default order length-width to width-length. The default value equals 0.

GENK

Option for enabling automatic computation of second-order mutual inductance for several coupled inductors, where a value of 1 enables the calculation. The default value equals 1.

KLIM

Minimum mutual inductance below which automatic second-order mutual inductance calculation will no longer proceed. KLIM is unitless (analogous to coupling strength specified in the K Element), and typical values for klim are between .5 and 0.0. The default value equals 0.01.

EXPLI

Current explosion model parameter. The PN junction characteristics above the explosion current are linearized, with the slope determined at the explosion point. This speeds up simulation and improves convergence. The default value equals 1e15amp/AREAeff.

EXPLI

Current explosion model parameter. The PN junction characteristics above the explosion current are linearized, with the slope determined at the explosion point. This speeds up simulation and improves convergence. The default value equals 1e15 amp/AREAeff.