Using TriQuint Model (TOM) Extensions to LEVEL=3

TOM "TriQuint's Own Model" (See A.J. McCamant, G.D. Mc Cormack, and D.H.Smith, An Improved GaAs MESFET Model for SPICE, IEEE) is implemented as part of the existing GaAs LEVEL 3 model. See W.Curtice, A MESFET Model For Use In the Design of GaAs Integrated Circuits, IEEE Tran, Microwave and H.Statz, P.Newman, I.W.Smith, R.A. Pucel, and H.A. Haus, "GaAs FET Device And Circuit Simulation in SPICE".

There are a few differences from the original implementation. The Star-Hspice version of the TOM model takes advantage of existing LEVEL 3 features to provide:

Several alias TOM parameters are defined for existing Star-Hspice LEVEL 3 parameters to make the conversion easier. An alias allows the original name or the alias name to be used in the .MODEL statement. However, the model parameter printout is in the original name. Please note that in two cases, a sign reversal is needed, even when using the TOM parameter name.

Alias

HSPICE Printout Name

Note

Q

VGEXP

 

GAMMA

GAMDS

sign opposite of TriQuint's original

VTOTC

TCV

sign opposite of TriQuint's original

TRG1

TRG

 

TRD1

TRD

 

TRS1

TRS

 

TOM Model Parameters

Name (Alias)

Description

BETATCE

Temperature coefficient for BETA

If betatce is set to a nonzero value:

 

The more common HSPICE Beta temperature update is:

 

DELTA

Ids feedback parameter of the TOM model. This parameter is not used if its value is zero. DELTA can be negative or positive.

 

CAPDS

Drain-to-source capacitance

 


NOTE: In the original TOM implementation by TriQuint, parameters LAMBDA and UCRIT do not exist. Therefore, they must remain zero (their default value) in HSPICE LEVEL 3 in order to reproduce the TOM model. Use of nonzero values for these parameters with nonzero BETATCE, DELTA, or CAPDS results in a hybrid model.

 

Star-Hspice Manual - Release 2001.2 - June 2001