Publications / Patents

Most Recent (回国之后的,Shanghai Jiaotong University, 2013-2019:

第一作者(也是通讯作者论文)(9篇)
[1]. Franklin Li Duan, Zhi Yang, Zhonglin Ji, Haotian Weng, Ziyi Xie, Allegro Shen, Shijie Mi, Xi Chen, Yigang Chen, Qianhui Liu, Process optimization and device variation of Mg-doped ZnO FBARs, Solid-State Electronics, Volume 151, 2019, Pages 11-17, ISSN 0038-1101.
[2]. Duan Franklin Li, Hu M, Zou B, et al. An Easy Way of High-Temperature Monitoring of Turbine Blade Surface for Intelligent Propulsion Systems[C]// Joint Propulsion Conference. 2018.
[3]. Franklin L. Duan, Mingkai Hu, Yuzhen Lin, Jibao Li, and Xueqiang Cao. "A New High-Temperature Sensing Device by Making Use of TBC Thermistor for Intelligent Propulsion Systems", 2018 AIAA/IEEE Electric Aircraft Technologies Symposium, AIAA Propulsion and Energy Forum, (AIAA 2018-5015) https://doi.org/10.2514/6.2018-5015
[4]. Franklin L. Duan and Yuzhen Lin. "Development of Accurate and Robust High Temperature Sensor on Aero-engine Turbine Blade Surface", 2018 Joint Propulsion Conference, AIAA Propulsion and Energy Forum, (AIAA 2018-4622). https://doi.org/10.2514/6.2018-4622
[5]. Franklin Li Duan, Jibao Li, Junchao Gao, Guifu Ding, and Xueqiang Cao. "Integrated Fabrication of High-Temperature Microelectromechanical System Sensor on Aeroengine Turbine Blade", Journal of Thermophysics and Heat Transfer, Vol. 32, No. 3 (2018), pp. 828-830. https://doi.org/10.2514/1.T5147
[6]. Franklin L. Duan. "High Temperature Sensors for Intellegent Aero-Engine Applications", 33rd AIAA Aerodynamic Measurement Technology and Ground Testing Conference, AIAA AVIATION Forum, (AIAA 2017-3239), https://doi.org/10.2514/6.2017-3239
[7]. 段力,卢学良,史丽云,王英,付学成,王丹凤,汪军,沈勇,翁昊天,张亚非,氧化锌系列薄膜体声波谐振器的研制和性能表征 [J]. 微纳电子技术, 2016(11):333-339.
[8]. 段力, 高均超, 汪瑞军, 胡铭楷, 苏靖超, & 成清清等. (2017). 航空发动机叶片表面热障涂层温度分布的仿真分析.《上海交通大学学报,》51(8), 915-920.
[9]. 段力,高均超,丁桂甫,邵靖,毛成龙,沈杰,静波.航空发动机涡轮叶片原位集成高温MEMS 传感器的研制 《航空发动机》,2018,44(4):56-60


通讯作者论文(12篇)
[1]. Junchao Gao, Franklin Li Duan*, Chang Yu, Wentao Meng, Lizuo Liu, Guifu Ding, Congchun Zhang, Ying Wang, Electrical insulation of ceramic thin film on metallic aero-engine blade for high temperature sensor applications, Ceramics International, Volume 42, Issue 16, December 2016, Pages 19269-19275, ISSN 0272-8842, http://dx.doi.org/10.1016/j.ceramint.2016.09.093.
[2]. Mingkai Hu, Franklin Li Duan*, Design, fabrication and characterization of SAW devices on LiNbO3 bulk and ZnO thin film substrates, Solid-State Electronics, Volume 150, 2018, Pages 28-34, ISSN 0038-1101, https://doi.org/10.1016/j.sse.2018.08.005. (http://www.sciencedirect.com/science/article/pii/S0038110118300509) Keywords: SAW device; Surface acoustic wave; Wireless sensor; RF resonator; Temperature sensor
[3]. Yijian Liu, Zhongli Li, Zhi Yang, Yanjie Su, Yaozhong Zhang, Huey-liang Hwang, Franklin Duan**, Yafei Zhang*. Novel design and performance of the solidly mounted resonator with an AlN-buffered ZnO piezoelectric film [J]. Vacuum, 154 (2018) 11-17.
[4]. Jin S, Li Duan*, Qiang W, et al. Fabrication and High Temperature Characterization by MEMS Embedded Sensor[J]. Chinese Journal of Sensors & Actuators, 2017, 30(9):1352-1358.
[5]. 李磊, 段力*, 秦格华, 马德川, 王云生, & 陶闻钟等. (2017). 应用于航空发动机涡轮叶片的热障涂层材料研究.《功能材料》48 (2), 2084-2090.
[6]. 邵靖, 段力*, 胡铭楷, 丁桂甫, 毛成龙, & 沈杰等. (2018). Mems原位集成传感器振动冲击试验研究.《振动.测试与诊断》(3).
[7]. 胡铭楷 翁昊天 刘骏尘 付学成 史丽云 丁桂甫 张亚非 段力*. 设计和工艺参数对声表面波器件性能的影响 《微纳电子技术》, 2017, 54(11):752-759.
[8]. 高均超,段力*,王英,刘明,王凤丹,丁桂甫,汪红,程萍,吴凯峰,王强,郑芳芳,邵靖,谢开成,PDMS软质模板制备与叶片曲表面图形转移工艺,微纳电子科技,2016.5
[9]. 陈翰, 段力*, 丁丽华. 一种提高流片效率的亚分辨率辅助图形OPC方法[J]. 2016.
[10]. 陈权, 段力*, 毛智彪. 亚分辨率辅助图形对28纳米密集线条光刻成像的影响[J]. 中国集成电路, 2016, 25(5).
[11]. 许贻梅, 段力*, & 钱文生. (2017). 基于0.18μm cmos工艺实现无epi新型ldmos器件. 《集成电路应用,》34(4), 62-67.
[12]. 曹琛 段力*,《0.11∼0.18um 半导体制造IMD 气泡解决方案》. 集成电路应用,第35卷第12期(总第303期),2018年12月。



既非第一作者又非通讯作者论文(6篇)
[1]. Yijian Liu, Yong Shen, Franklin Duan, Yaozhong Zhang, Zhongli Li, Huey-liang, Hwang, Yafei Zhang, Solidly mounted resonators fabricated for GHz frequency applications based on MgxZn1-xO piezoelectric film, Vacuum, Volume 141, 2017, Pages 254-258, ISSN 0042-207X, https://doi.org/10.1016/j.vacuum.2017.04.012.
[2]. J. Han, P. Cheng, H. Wang, C. C. Zhang, J. B. Zhang, Y. Wang, L. Duan and G. F. Ding, “MEMS-based Pt film temperature sensor on alumina substrate”, J. Materials. Letters, 125(2014) 224-226.
[3]. Liu Y, Shen Y, Duan F, et al. Solidly mounted resonators fabricated for GHz frequency applications based on Mg x Zn 1-x O piezoelectric film[J]. Vacuum, 2017, 141.
[4]. Yafei Zhang, Li Franklin Duan, Yaozhong Zhang, Jian Wang, Huijuan Geng, Qing Zhang, Advances in Conceptual Electronic Nanodevices based on 0D and 1D Nanomaterials, Nano-Micro Letters 2014, 6, 1–19.
[5]. 李洪美, 孙云娜, 段力, 王艳, 丁桂甫, 张久斌, 牛迪,高温复合多层膜结构传感器的热机械可靠性 ,《仪表技术与传感器》 2015年11期
[6]. 沈勇, 刘一剑, 杨翰林, 段力, & 张亚非. (2014). Mg_xzn_(1-x)o压电薄膜表面粗糙度对smr性能的影响. 微纳电子技术(12), 776-779..
 


Old(Silicon Valley, LSI and AMD):

²  Franklin Duan, Stephen Cooper, Amit Marathe, John Zhang, Sankaran Kartik Jayanarayanan. "Impact of Monitoring Voltage on the Lifetime Extrapolation During the Accelerated Degradation Tests", IIRW2006.

²  F. Duan, R. Castagnetti, R. Venkatraman, O. Kobozeva, and S. Ramesh, LSI Logic Corporation, "Design and Use of Memory-Specific Test Structures to Ensure SRAM Yield and Manufacturability", ISQED'2003, pp119-124, 2003

²  Chuanzhao Yu, J. Zhang, J. S. Yuan, F. Duan, S. K. Jayanarananan, A. Marathe, S. Cooper, V. Pham, and J.-S. Goo, I, "Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS Devices", EEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 1, JANUARY 2007

²  W. Kong, R.Venkatraman, R. Castagnetti, F. Duan and S. Ramesh, "High-Density and High-Performance 6T-SRAM for System-on-Chip in 130 nm CMOS Technology", VLSI Symposium, 2001.

²  Puchner, H.; Liu, Y.-C.; Kong, W.; Duan, F.; Castagnetti, R.; , "N-Well Engineering to Improve Soft-Error-Rate Immunity for P-Type Substrate SRAM Technologies," Solid-State Device Research Conference, 2001. Proceeding of the 31st European , vol., no., pp. 295- 298, 11-13 September 2001,

²  Venkatraman, R.; Castagnetti, R.; Kobozeva, O.; Duan, F.L.; Kamath, A.; Sabbagh, S.T.; Vilchis-Cruz, M.A.; Liaw, J.J.; Jyh-Cheng You; Ramesh, S.; , "The design, analysis, and development of highly manufacturable 6-T SRAM bitcells for SoC applications," Electron Devices, IEEE Transactions on , vol.52, no.2, pp. 218- 226, Feb. 2005.

²  Olga Kobozeva, Ramnath Venkatraman, Ruggero Castagnetti, Franklin Duan, Arvind Kamath and Shiva Ramesh, "Designing high-performance cost-efficient embedded SRAM in deep-submicron era", Proc. SPIE 5379, 241 (2004);

²   

Previous (Ph. D Period)

²  Duan, F.L.; Ioannou, D.E.; Jenkins, W.C.; Hughes, H.L.; Liu, M.S.T.; , "Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs," Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International , vol., no., pp.194-202, March 31 1998-April 2 1998,

²  Ioannou, D.E.; Duan, F.L.; Sinha, S.P.; Zaleski, A.; , "Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications," Electron Devices, IEEE Transactions on , vol.45, no.5, pp.1147-1154, May 1998

²  Ioannou, D.E.; Duan, F.L.; Jenkins, W.C.; Hughes, H.L.; , "Channel Coupling and Edge Effect Imposed Trade-offs on Fully-Depleted (FD) SOI MOSFET's," Solid-State Device Research Conference, 1998. Proceeding of the 28th European , vol., no., pp.616-619, 8-10 Sept. 1998,

²  Dimitris E. Ioannou, Franklin L. Duan, Williams C. Jenkins, and Harold L. Hughes, “Channel Coupling Imposed Tradeoffs on Fully-Depleted (FD) SOI MOSFET’s”, ESSDREC’98.

²  Franklin L. Duan, Dimitris E. Ioannou, Shankar P. Sinha, and Frederick T. Brady,  “LDD Design Tradeoffs for Self Latch-Up and Hot Carrier Degradation Control in Accumulation Mode FD SOI MOSFET’s”, IEEE Transactions on Electron Devices, vol. 44, pp.972-977, 1997.

²  F.L. Duan, X.Zhao, D.E. Ioannou, H.L. Hughes and S.T. Liu, “Detrimental Edge Effects on the Floating Body Phenomena in SOI MOSFETs”, Symposium of 192nd International Meeting of the Electrochemical Society, Inc., pp.239-245, 1997.

²  Franklin L. Duan and Dimitris E. Ioannou, “Design and Analysis of a Novel Mixed Accumulation/Inversion Mode FD SOI MOSFET”, 1997 IEEE International SOI Conference Proceedings, pp.100-101, 1997.

²  D.E. Ioannou, F.L. Duan, and X. Zhao, “SIMOX Substrate and MOSFET’s for Enhanced Reliability and Performance”, 1997 International Semiconductor Device Research Symposium, pp.627-630, 1997.

²  X. Zhao, F.L. Duan, A. Thanailakis, D.E. Ioannou, R.K. Lawrence, and H.L. Hughes, “Hole Trap Investigation in Supplemental Oxygen SIMOX Wafers by Opposite Channel Based Charge Injection”, 1997 IEEE International SOI Conference Proceedings, pp.116-117, 1997.

²  Shankar P. Sinha, Franklin L. Duan, Dimitris E. Ioannou, William C. Jenkins, and Harold L. Hughes, “Time Dependence Power Laws of Hot Carrier Degradation in SOI MOSFET’s”, 1996 IEEE International SOI Conference Proceedings, pp.18-19, 1996.

S. P. Sinha, F.L. Duan, D.E. Ioannou, William C. Jenkins, Harold L. Hughes, and M.S. Liu, “Hot Carrier Degradation of Fully Depleted SIMOX MOSFET’s”, Proceedings of the 7th International Symposium On Silicon-On-Insulator Technology and Devices, pp.324-329, 1996.

P a t e n t s 专利

²  Reduced soft error rate (SER) construction for integrated circuit structures, 2002

²  Single channel four transistor SRAM, 2002

²  A new method to detect random and systematic transistor degradation for transistor reliability evaluation in high-density memory – 2003

²  Method and apparatus for characterizing shared contacts in high-density SRAM cell design – 2003

²  New methodology to measure many more transistors on the same test area – 2007

 

 

 

DOWNLOAD

  1. PDMS软模板制备与叶片曲表面软光刻工艺 http://xueshu.baidu.com/usercenter/paper/show?paperid=460a8016a329f11084d6ebefbf6b7cc7&site=xueshu_se&sc_from=sjtu

  2. Design, fabrication and characterization of SAW devices on LiNbO  bulk and ZnO thin film substrates https://www.sciencedirect.com/science/article/pii/S0038110118300509
  3. Development of Accurate and Robust High Temperature Sensor on Aero-engine Turbine Blade Surface https://scholar.google.com/scholar?hl=zh-CN&as_sdt=0%2C5&q=Development+of+Accurate+and+Robust+High+Temperature+Sensor+on+Aero-engine+Turbine+Blade+Surface&btnG=  https://arc.aiaa.org/doi/10.2514/6.2018-4622
  4. Process optimization and device variation of Mg-doped ZnO FBARs https://scholar.google.com/scholar?hl=zh-CN&as_sdt=0%2C5&q=Mg-doped+ZnO+FBARs+duan&btnG=  https://www.sciencedirect.com/science/article/pii/S0038110118302715
  5. Integrated Fabrication of High-Temperature Microelectromechanical System Sensor on Aeroengine Turbine Blade http://xueshu.baidu.com/usercenter/paper/show?paperid=34d573b1978233266f13a44c57c26c40&site=xueshu_se&sc_from=sjtu

  6. 氧化锌系列薄膜体声波谐振器的研制和性能表征 https://scholar.google.com/scholar?hl=zh-CN&as_sdt=0%2C5&q=%E6%B0%A7%E5%8C%96%E9%94%8C%E7%B3%BB%E5%88%97%E8%96%84%E8%86%9C%E4%BD%93%E5%A3%B0%E6%B3%A2%E8%B0%90%E6%8C%AF%E5%99%A8%E7%9A%84%E7%A0%94%E5%88%B6%E5%92%8C%E6%80%A7%E8%83%BD%E8%A1%A8%E5%BE%81&btnG= http://www.cnki.com.cn/Article/CJFDTotal-BDTQ201611004.htm

  7. Electrical insulation of ceramic thin film on metallic aero-engine blade for high temperature sensor applications https://scholar.google.com/scholar?hl=zh-CN&as_sdt=0%2C5&q=Electrical+insulation+of+ceramic+thin+film+on+metallic+aero-engine+blade+for+high+temperature+sensor+applications&btnG= https://www.google.com/search?source=hp&ei=nV0ZXan0I8n18gXrnLyQDw&q=duan+Electrical+insulation+of+ceramic+thin+film+on+metallic+aero-engine+blade+for+high+temperature+sensor+applications&oq=duan+Electrical+insulation+of+ceramic+thin+film+on+metallic+aero-engine+blade+for+high+temperature+sensor+applications&gs_l=psy-ab.3..35i39l10.2423.2423..4067...1.0..0.157.157.0j1......1....2j1..gws-wiz.....10.-dbNx_RrxZI

  8. Solidly mounted resonators fabricated for GHz frequency applications based on Mg x Zn 1-x O piezoelectric film http://xueshu.baidu.com/s?wd=duan+acoustic+franklin+resonator&tn=SE_baiduxueshulib_9r82kicg&cl=3&ie=utf-8&sc_as_para=sc_lib%3Asjtu&sc_from=sjtu&bs=duan+Electrical+insulation+of+ceramic+thin+film+on+metallic+aero-engine+blade+for+high+temperature+sensor+applications&f=8&rsv_bp=1&rsv_sug2=0&sc_f_para=sc_tasktype%3D%7BfirstSimpleSearch%7D&rsv_n=2

  9. 航空发动机热障涂层的温度分布的计算机仿真研究 https://scholar.google.com/scholar?hl=zh-CN&as_sdt=0%2C5&q=%E8%88%AA%E7%A9%BA%E5%8F%91%E5%8A%A8%E6%9C%BA%E7%83%AD%E9%9A%9C%E6%B6%82%E5%B1%82%E7%9A%84%E6%B8%A9%E5%BA%A6%E5%88%86%E5%B8%83%E7%9A%84%E8%AE%A1%E7%AE%97%E6%9C%BA%E4%BB%BF%E7%9C%9F%E7%A0%94%E7%A9%B6&btnG=

  10. High Temperature Sensors for Intellegent Aero-Engine Applications  https://arc.aiaa.org/doi/pdf/10.2514/6.2017-3239 https://scholar.google.com/scholar?lookup=0&q=High+Temperature+Sensors+for+Intellegent+Aero-Engine+Applications+duan&hl=zh-CN&as_sdt=0,5


早期文章

 

A Study of the Hot Carrier Degradation of 90 nm node SOI and Bulk Technologies

F Duan  S Cooper  A Marathe , ...  -  被引量:  0
Abstract: A comparative study is undertaken of the hot carrier degradation of 90 nm node bulk and SOI technologies. The floating body effect on the drive current and the electric field leads to slightly higher degradation for the SOI ...
来源: km2000.us 

Reduced soft error rate (SER) construction for integrated circuit structures

... W Kong  L Phan  F Duan , ... -  2002  -  被引量:  0
An integrated circuit structures such as an SRAM construction wherein the soft error rate is reduced comprises an integrated circuit structure formed in a semiconductor substrate, wherein at least one N channel transistor is built in ...
来源: ResearchGate  /  ResearchGate 

LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's

FL Duan  SP Sinha  DE Ioannou , ... -  1997  -  被引量:  15
Abstract An experimental study has been conducted of the design tradeoffs of fully-depleted (FD) accumulation mode Silicon-on-Insulator (SOI) MOSFET's w...

 STUDIES ON CHANNEL COUPLING AND FLOATING BODY EFFECTS AND THEIR IMPACTS ON DEVICE PERFORMANCE AND RELIABILITY IN SOI MOSFET

FL Duan  -  被引量:  0
SOI MOSFET is one of the promising options for the future VLSI market due to its low power/high speed character and simplified technology with increased packing density. Yet some problems in device physics must be fully understood bef...
来源: km2000.us 

Electrical Insulation of Ceramic Thin Film on Metallic Aero-Engine Blade for High Temperature Sensor Applications

J Gao  FL Duan  C Yu , ... -  《Ceramics Interna...  -  2016  -  被引量:  0
Fabricating sensor devices directly on metallic component requires the use of an electrical insulating ceramic layer between the sensor and the metal. H...
来源: ResearchGate  /  dx.doi.org  /  infona.pl

Review on Signal Detection of Low DC Current in Nanodevices and Various Sensors

Y Liang  J Chen  FL Duan , ... -  2015  -  被引量:  0
Review on Signal Detection of Low DC Current in Nanodevices and Various Sensorsdoi:10.11605/mee-1-1Yantao LiangJiapin ChenFranklin Li DuanDong XuJun WangHanling YangYafei Zhang...
来源: ResearchGate  /  meej.org

 CHANNEL COUPLING IMPOSED TRADEOFFS ON HOT AND SINGLE TRANSISTOR LATCH-UP IN DEGRADAT ET'S

FL Duan  DE Ioannou  WC Jenkins , ...  -  被引量:  0
Carrier generation by impact ionization in SO1 MOSFET's as a fimction of the strength of channel coupling, adjusted by varying the back gate bias or the silicon film thickness, was extensively studied by extensive PISCES numerical sim...
来源: ResearchGate   /  km2000.us 

 Single channel four transistor SRAM

... R Venkatraman  YC Liu  F Duan , ... -  US  -  2002  -  被引量:  8
A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first p...
来源: FreePatentsOnline  /  Google Patents

 Method and apparatus for characterizing shared contacts in high-density SRAM cell design

F Duan  S Ramesh  R Castagnetti  -  US  -  2005  -  被引量:  7
Test structures are provided for accurately quantifying shared contact resistance. The test structures are built based upon an actual memory cell, which is self-aligning to allow shared contact chains through an array of test cells. A...
来源: FreePatentsOnline  /  Google Patents

 Test structures in unused areas of semiconductor integrated circuits and methods for designing the same

F Duan  M Ardans  J Song  -  US  -  2007  -  被引量:  6
The present invention is test structures in unused areas of semiconductor integrated circuits and methods for designing the same. In an exemplary aspect of the present invention, a method for placing test structures in a semiconductor...
来源: FreePatentsOnline  /  Google Patents
 

 New methodology to measure many more transistors on the same test area

F Duan  M Liu  J Walker , ... -  US  -  2005  -  被引量:  2
A test methodology which provides that test structures, such as transistors, are arranged in a plurality of rows. A logic circuit controls which row is to be measured. An incrementer receives a triggering signal and functions as an ad...
来源: FreePatentsOnline  /  Google Patents

 Device Performance and Reliability in SOI MOSFET

F Duan  -  LAP LAMBERT Acade...  -  2012  -  被引量:  0
SOI MOSFET is one of the promising options for the future VLSI market due to its low power/high speed character and simplified technology with increased...
来源: morebooks.de

 Methodology to measure many more transistors on the same test area

F Duan  M Liu  J Walker , ... -  US  -  2007  -  被引量:  0
A test methodology which provides that test structures, such as transistors, are arranged in a plurality of rows. A logic circuit controls which row is to be measured. An incrementer receives a triggering signal and functions as an ad...
来源: FreePatentsOnline  /  Google Patents

Reduced soft error rate (SER) construction for integrated circuit structures

... W Kong  L Phan  F Duan , ... -  US  -  2002  -  被引量:  14
An integrated circuit structures such as an SRAM construction wherein the soft error rate is reduced comprises an integrated circuit structure formed in a semiconductor substrate, wherein at least one N channel transistor is built in ...
来源: FreePatentsOnline  /  Google Patents  /  ResearchGate 

Single channel four transistor SRAM

... R Venkatraman  YC Liu  F Duan , ... -  2002  -  被引量:  1
A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first p...
来源: deepdyve.com

 Compositions and methods for treating endocrine, gastrointestinal or autoimmune disorders

JC March  FF Duan  -  US  -  2016  -  被引量:  0
Recombinant cells and methods are provided that relate to the use of isolated, engineered recombinant cells to directly or indirectly treat diseases or disorders in a mammalian host such as endocrine, gastrointestinal or autoimmune di...
来源: FreePatentsOnline  /  Google Patents

 Commensal bacteria as signal mediators within a mammalian host

JC March  FF Duan  -  US  -  2014  -  被引量:  0
Genetically engineered cells and microorganisms are provided for preventing or ameliorating diseases through genetically engineered quorum signaling. Therapeutic methods for using the cells and microorganisms to prevent or ameliorate ...
来源: FreePatentsOnline  /  Google Patents  /  data.epo.org 
 
 

 Method and architecture for detecting random and systematic transistor degradation for transistor reliability evaluation in high-den...

FL Duan  S Ramesh  R Castagnetti  -  US  -  2005  -  被引量:  1
A self-aligning memory cell design is provided to allow testing of transistors in every cell of a memory circuit. A test array of these cells is fabricated with contact pads in each cell for specific components in the cell. Then, meta...
来源: FreePatentsOnline  /  Google Patents

Test structures in unused areas of semiconductor integrated circuits and methods for designing the same

Duan  Franklin  -  2007  -  被引量:  1
The present invention is test structures in unused areas of semiconductor integrated circuits and methods for designing the same. In an exemplary aspect of the present invention, a method for placing test structures in a semiconductor...
来源: patents.com  /  en.zl50.com

Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications

DE Ioannou  FL Duan  SP Sinha , ... -  《IEEE Transaction...  -  1998  -  被引量:  39
IEEE Xplore. Delivering full text access to the world's highest quality technical literature in engineering and technology.... Duan Franklin L, Sinha Sh...

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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Links:

Puchner, H.; Liu, Y.-C.; Kong, W.; Duan, F.; Castagnetti, R.; , "N-Well Engineering to Improve Soft-Error-Rate Immunity for P-Type Substrate SRAM Technologies," Solid-State Device Research Conference, 2001. Proceeding of the 31st European , vol., no., pp. 295- 298, 11-13 September 2001
doi: 10.1109/ESSDERC.2001.195259
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1506641&isnumber=32281

Yu, C.; Zhang, J.; Yuan, J. S.; Duan, F.; Jayanarananan, S. K.; Marathe, A.; Cooper, S.; Pham, V.; Goo, J.-S.; , "Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS Devices," Electron Device Letters, IEEE , vol.28, no.1, pp.45-47, Jan. 2007
doi: 10.1109/LED.2006.886413
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4039573&isnumber=4039542



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Venkatraman, R.; Castagnetti, R.; Kobozeva, O.; Duan, F.L.; Kamath, A.; Sabbagh, S.T.; Vilchis-Cruz, M.A.; Liaw, J.J.; Jyh-Cheng You; Ramesh, S.; , "The design, analysis, and development of highly manufacturable 6-T SRAM bitcells for SoC applications," Electron Devices, IEEE Transactions on , vol.52, no.2, pp. 218- 226, Feb. 2005
doi: 10.1109/TED.2004.841346
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1386591&isnumber=30185

Sinha, S.P.; Duan, F.L.; Ioannou, D.E.; Jenkins, W.C.; Hughes, H.L.; , "SOI-specific hot-hole induced degradation in PD and FD transistors ," SOI Conference, 1995. Proceedings., 1995 IEEE International , vol., no., pp.76-77, 3-5 Oct 1995
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Duan, F.L.; Zhao, X.; Ioannou, D.E.; , "Increased channel edge impact ionization in SOI MOSFET's and effects on device operation," SOI Conference, 1998. Proceedings., 1998 IEEE International , vol., no., pp.171-172, 5-8 Oct 1998
doi: 10.1109/SOI.1998.723166
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=723166&isnumber=15630

Zhao, X.; Duan, F.L.; Thanailakis, A.; Ioannou, D.E.; Lawrence, R.K.; Hughes, H.L.; , "Hole trap investigations in supplemental oxygen SIMOX wafers by opposite channel based charge injection," SOI Conference, 1997. Proceedings., 1997 IEEE International , vol., no., pp.116-117, 6-9 Oct 1997
doi: 10.1109/SOI.1997.634960
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=634960&isnumber=13782

Duan, F.L.; Sinha, S.P.; Ioannou, D.E.; Brady, F.T.; , "LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's," Electron Devices, IEEE Transactions on , vol.44, no.6, pp.972-977, Jun 1997
doi: 10.1109/16.585553
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=585553&isnumber=12670

Sinha, S.P.; Duan, F.L.; Ioannou, D.E.; Jenkins, W.C.; Hughes, H.L.; , "Time dependence power laws of hot carrier degradation in SOI MOSFETS," SOI Conference, 1996. Proceedings., 1996 IEEE International , vol., no., pp.18-19, 30 Sep-3 Oct 1996
doi: 10.1109/SOI.1996.552472
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=552472&isnumber=11984

Duan, F.L.; Ioannou, D.E.; Jenkins, W.C.; Hughes, H.L.; Liu, M.S.T.; , "Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs," Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International , vol., no., pp.194-202, March 31 1998-April 2 1998
doi: 10.1109/RELPHY.1998.670542
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=670542&isnumber=14724

Ioannou, D.E.; Duan, F.L.; Sinha, S.P.; Zaleski, A.; , "Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications," Electron Devices, IEEE Transactions on , vol.45, no.5, pp.1147-1154, May 1998
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URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=669576&isnumber=14610

Ioannou, D.E.; Duan, F.L.; Jenkins, W.C.; Hughes, H.L.; , "Channel Coupling and Edge Effect Imposed Trade-offs on Fully-Depleted (FD) SOI MOSFET's," Solid-State Device Research Conference, 1998. Proceeding of the 28th European , vol., no., pp.616-619, 8-10 Sept. 1998
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1503627&isnumber=32252


Duan, F.; Cooper, S.; Marathe, A.; Zhang, J.; Jayanarayanan, S.K.; , "Impact of Monitoring Voltage on the Lifetime Extrapolation During the Accelerated Degradation Tests," Integrated Reliability Workshop Final Report, 2006 IEEE International , vol., no., pp.139-141, Oct. 16 2006-Sept. 19 2006
doi: 10.1109/IRWS.2006.305229
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4098706&isnumber=4079457

Puchner, H.; Liu, Y.-C.; Kong, W.; Duan, F.; Castagnetti, R.; , "N-Well Engineering to Improve Soft-Error-Rate Immunity for P-Type Substrate SRAM Technologies," Solid-State Device Research Conference, 2001. Proceeding of the 31st European , vol., no., pp. 295- 298, 11-13 September 2001
doi: 10.1109/ESSDERC.2001.195259
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1506641&isnumber=32281

 


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