Element Template Listings

Resistor

Name

Alias

Description

G

LV1

Conductance at analysis temperature

R

LV2

Resistance at reference temperature

TC1

LV3

First temperature coefficient

TC2

LV4

Second temperature coefficient

 

Capacitor

Name

Alias

Description

CEFF

LV1

Computed effective capacitance

IC

LV2

Initial condition

Q

LX0

Charge stored in capacitor

CURR

LX1

Current flowing through capacitor

VOLT

LX2

Voltage across capacitor

-

LX3

Capacitance (not used in Star-Hspice releases after 95.3)

 

Inductor

Name

Alias

Description

LEFF

LV1

Computed effective inductance

IC

LV2

Initial condition

FLUX

LX0

Flux in the inductor

VOLT

LX1

Voltage across inductor

CURR

LX2

Current flowing through inductor

-

LX4

Inductance (not used in Star-Hspice releases after 95.3)

Mutual Inductor

Name

Alias

Description

K

LV1

Mutual inductance

 

Voltage-Controlled Current Source

Name

Alias

Description

CURR

LX0

Current through the source, if VCCS

R

LX0

Resistance value, if VCR

C

LX0

Capacitance value, if VCCAP

CV

LX1

Controlling voltage

CQ

LX1

Capacitance charge, if VCCAP

DI

LX2

Derivative of source current with respect to control voltage

ICAP

LX2

Capacitance current, if VCCAP

VCAP

LX3

Voltage across capacitance, if VCCAP

Voltage-Controlled Voltage Source

Name

Alias

Description

VOLT

LX0

Source voltage

CURR

LX1

Current through source

CV

LX2

Controlling voltage

DV

LX3

Derivative of source voltage with respect to control current

 

Current-Controlled Current Source

Name

Alias

Description

CURR

LX0

Current through source

CI

LX1

Controlling current

DI

LX2

Derivative of source current with respect to control current

 

Current-Controlled Voltage Source

Name

Alias

Description

VOLT

LX0

Source voltage

CURR

LX1

Source current

CI

LX2

Controlling current

DV

LX3

Derivative of source voltage with respect to control current

Independent Voltage Source

Name

Alias

Description

VOLT

LV1

DC/transient voltage

VOLTM

LV2

AC voltage magnitude

VOLTP

LV3

AC voltage phase

Independent Current Source

Name

Alias

Description

CURR

LV1

DC/transient current

CURRM

LV2

AC current magnitude

CURRP

LV3

AC current phase

 

Diode

Name

Alias

Description

AREA

LV1

Diode area factor

AREAX

LV23

Area after scaling

IC

LV2

Initial voltage across diode

VD

LX0

Voltage across diode (VD), excluding RS (series resistance)

IDC

LX1

DC current through diode (ID), excluding RS. Total diode current is the sum of IDC and ICAP

GD

LX2

Equivalent conductance (GD)

QD

LX3

Charge of diode capacitor (QD)

ICAP

LX4

Current through diode capacitor.

Total diode current is the sum of IDC and ICAP.

C

LX5

Total diode capacitance

PID

LX7

Photo current in diode

BJT

Name

Alias

Description

AREA

LV1

Area factor

ICVBE

LV2

Initial condition for base-emitter voltage (VBE)

ICVCE

LV3

Initial condition for collector-emitter voltage (VCE)

MULT

LV4

Number of multiple BJTs

FT

LV5

FT (Unity gain bandwidth)

ISUB

LV6

Substrate current

GSUB

LV7

Substrate conductance

LOGIC

LV8

LOG 10 (IC)

LOGIB

LV9

LOG 10 (IB)

BETA

LV10

BETA

LOGBETAI

LV11

LOG 10 (BETA) current

ICTOL

LV12

Collector current tolerance

IBTOL

LV13

Base current tolerance

RB

LV14

Base resistance

GRE

LV15

Emitter conductance, 1/RE

GRC

LV16

Collector conductance, 1/RC

PIBC

LV18

Photo current, base-collector

PIBE

LV19

Photo current, base-emitter

VBE

LX0

VBE

VBC

LX1

Base-collector voltage (VBC)

CCO

LX2

Collector current (CCO)

CBO

LX3

Base current (CBO)

GPI

LX4

g = ib /vbe, constant vbc

GU

LX5

g µ = ib /vbc, constant vbe

GM

LX6

g m = ic /vbe+ ic /vbe, constant vce

G0

LX7

g 0 = ic /vce, constant vbe

QBE

LX8

Base-emitter charge (QBE)

CQBE

LX9

Base-emitter charge current (CQBE)

QBC

LX10

Base-collector charge (QBC)

CQBC

LX11

Base-collector charge current (CQBC)

QCS

LX12

Current-substrate charge (QCS)

CQCS

LX13

Current-substrate charge current (CQCS)

QBX

LX14

Base-internal base charge (QBX)

CQBX

LX15

Base-internal base charge current (CQBX)

GXO

LX16

1/Rbeff Internal conductance (GXO)

CEXBC

LX17

Base-collector equivalent current (CEXBC)

-

LX18

Base-collector conductance (GEQCBO) (not used in Star-Hspice releases after 95.3)

CAP_BE

LX19

cbe capacitance (C )

CAP_IBC

LX20

cbc internal base-collector capacitance (Cµ)

CAP_SCB

LX21

csc substrate-collector capacitance for vertical transistors
csb substrate-base capacitance for lateral transistors

CAP_XBC

LX22

cbcx external base-collector capacitance

CMCMO

LX23

(TF*IBE) /vbc

VSUB

LX24

Substrate voltage

JFET

Name

Alias

Description

AREA

LV1

JFET area factor

VDS

LV2

Initial condition for drain-source voltage

VGS

LV3

Initial condition for gate-source voltage

PIGD

LV16

Photo current, gate-drain in JFET

PIGS

LV17

Photo current, gate-source in JFET

VGS

LX0

VGS

VGD

LX1

Gate-drain voltage (VGD)

CGSO

LX2

Gate-to-source (CGSO)

CDO

LX3

Drain current (CDO)

CGDO

LX4

Gate-to-drain current (CGDO)

GMO

LX5

Transconductance (GMO)

GDSO

LX6

Drain-source transconductance (GDSO)

GGSO

LX7

Gate-source transconductance (GGSO)

GGDO

LX8

Gate-drain transconductance (GGDO)

QGS

LX9

Gate-source charge (QGS)

CQGS

LX10

Gate-source charge current (CQGS)

QGD

LX11

Gate-drain charge (QGD)

CQGD

LX12

Gate-drain charge current (CQGD)

CAP_GS

LX13

Gate-source capacitance

CAP_GD

LX14

Gate-drain capacitance

-

LX15

Body-source voltage (not used in Star-Hspice releases after 95.3)

QDS

LX16

Drain-source charge (QDS)

CQDS

LX17

Drain-source charge current (CQDS)

GMBS

LX18

Drain-body (backgate) transconductance (GMBS)

MOSFET

Name

Alias

Description

L

LV1

Channel length (L)

W

LV2

Channel width (W)

AD

LV3

Area of the drain diode (AD)

AS

LV4

Area of the source diode (AS)

ICVDS

LV5

Initial condition for drain-source voltage (VDS)

ICVGS

LV6

Initial condition for gate-source voltage (VGS)

ICVBS

LV7

Initial condition for bulk-source voltage (VBS)

-

LV8

Device polarity: 1 = forward, -1 = reverse (not used in Star-Hspice releases after 95.3)

VTH

LV9

Threshold voltage (bias dependent)

VDSAT

LV10

Saturation voltage (VDSAT)

PD

LV11

Drain diode periphery (PD)

PS

LV12

Source diode periphery (PS)

RDS

LV13

Drain resistance (squares) (RDS)

RSS

LV14

Source resistance (squares) (RSS)

XQC

LV15

Charge sharing coefficient (XQC)

GDEFF

LV16

Effective drain conductance (1/RDeff)

GSEFF

LV17

Effective source conductance (1/RSeff)

IDBS

LV18

Drain-bulk saturation current at -1 volt bias

ISBS

LV19

Source-bulk saturation current at -1 volt bias

VDBEFF

LV20

Effective drain bulk voltage

BETAEFF

LV21

BETA effective

GAMMAEFF

LV22

GAMMA effective

DELTAL

LV23

L (MOS6 amount of channel length modulation) (only valid for LEVELs 1, 2, 3 and 6)

UBEFF

LV24

UB effective (only valid for LEVELs 1, 2, 3 and 6)

VG

LV25

VG drive (only valid for LEVELs 1, 2, 3 and 6)

VFBEFF

LV26

VFB effective

-

LV31

Drain current tolerance (not used in Star-Hspice releases after 95.3)

IDSTOL

LV32

Source diode current tolerance

IDDTOL

LV33

Drain diode current tolerance

COVLGS

LV36

Gate-source overlap capacitance

COVLGD

LV37

Gate-drain overlap capacitance

COVLGB

LV38

Gate-bulk overlap capacitance

VBS

LX1

Bulk-source voltage (VBS)

VGS

LX2

Gate-source voltage (VGS)

VDS

LX3

Drain-source voltage (VDS)

CDO

LX4

DC drain current (CDO)

CBSO

LX5

DC source-bulk diode current (CBSO)

CBDO

LX6

DC drain-bulk diode current (CBDO)

GMO

LX7

DC gate transconductance (GMO)

GDSO

LX8

DC drain-source conductance (GDSO)

GMBSO

LX9

DC substrate transconductance (GMBSO)

GBDO

LX10

Conductance of the drain diode (GBDO)

GBSO

LX11

Conductance of the source diode (GBSO)

Meyer and Charge Conservation Model Parameters

QB

LX12

Bulk charge (QB)

CQB

LX13

Bulk charge current (CQB)

QG

LX14

Gate charge (QG)

CQG

LX15

Gate charge current (CQG)

QD

LX16

Channel charge (QD)

CQD

LX17

Channel charge current (CQD)

CGGBO

LX18

= CGS + CGD + CGB

CGDBO

LX19

,
(for Meyer CGD = -CGDBO)

CGSBO

LX20

,
(for Meyer CGS = -CGSBO)

CBGBO

LX21

,
(for Meyer CGB = -CBGBO)

CBDBO

LX22

 

CBSBO

LX23

 

QBD

LX24

Drain-bulk charge (QBD)

-

LX25

Drain-bulk charge current (CQBD) (not used in Star-Hspice releases after 95.3)

QBS

LX26

Source-bulk charge (QBS)

-

LX27

Source-bulk charge current (CQBS) (not used in Star-Hspice releases after 95.3)

CAP_BS

LX28

Bulk-source capacitance

CAP_BD

LX29

Bulk-drain capacitance

CQS

LX31

Channel charge current (CQS)

CDGBO

LX32

 

CDDBO

LX33

 

CDSBO

LX34

 

Saturable Core Element

Name

Alias

Description

MU

LX0

Dynamic permeability (mu) Weber/(amp-turn-meter)

H

LX1

Magnetizing force (H) Ampere-turns/meter

B

LX2

Magnetic flux density (B) Webers/meter 2

Saturable Core Winding

Name

Alias

Description

LEFF

LV1

Effective winding inductance (Henry)

IC

LV2

Initial condition

FLUX

LX0

Flux through winding (Weber-turn)

VOLT

LX1

Voltage across winding (Volt)

 

Star-Hspice Manual - Release 2001.2 - June 2001