Publications / Patents

Publications

Most Recent:

1.      "Impact of Monitoring Voltage on the Lifetime Extrapolation During the Accelerated Degradation Tests", IIRW2006. Franklin Duan,  Stephen Cooper, Amit Marathe, John Zhang, Sankaran Kartik Jayanarayanan, AMD, Sunnyvale, CA.

2.     "Design and Use of Memory-Specific Test Structures to Ensure SRAM Yield and Manufacturability", ISQED'2003, pp119-124, F. Duan, R. Castagnetti, R. Venkatraman, O. Kobozeva, and S. Ramesh, LSI Logic Corporation, 2003 -> links

3.      "High-Density and High-Performance 6T-SRAM for System-on-Chip in 130 nm CMOS Technology", W. Kong, R.Venkatraman, R. Castagnetti, F. Duan and S. Ramesh, LSI Logic Corporation, 2003, VLSI Symposium, 2001.

4.  "The design, analysis, and development of highly manufacturable 6-T SRAM bitcells for SoC applications Venkatraman, R.;   Castagnetti, R.;   Kobozeva, O.;   Duan, F.L.;   Kamath, A.;   Sabbagh, S.T.;   Vilchis-Cruz, M.A.;   Liaw, J.J.;   Jyh-Cheng You;   Ramesh, S.;   LSI Logic Corp., Milpitas, CA, USA , Feb. 2005

Previous:

1. Franklin L. Duan, Dimitris E. Ioannou, Shankar P. Sinha, and Frederick T. Brady,  ¡§LDD Design Tradeoffs for Self Latch-Up and Hot Carrier Degradation Control in Accumulation Mode FD SOI MOSFET¡¦s¡¨, IEEE Transactions on Electron Devices, vol. 44, pp.972-977, 1997.

2. F.L. Duan, X.Zhao, D.E. Ioannou, H.L. Hughes and S.T. Liu, ¡§Detrimental Edge Effects on the Floating Body Phenomena in SOI MOSFETs¡¨, Symposium of 192nd International Meeting of the Electrochemical Society, Inc., pp.239-245, 1997.

3. Franklin L. Duan and Dimitris E. Ioannou, ¡§Design and Analysis of a Novel Mixed Accumulation/Inversion Mode FD SOI MOSFET¡¨, 1997 IEEE International SOI Conference Proceedings, pp.100-101, 1997.

4. Franklin L. Duan, Dimitris E. Ioannou, Harold L. Hughes and Mike Liu, ¡§Channel Coupling Imposed Tradeoffs Between Hot Carrier Degradation and Single Transistor Latch-Up in FD SOI MOSFET¡¦s¡¨, IEEE International Reliability Physics Symposium, pp.194-202, 1998.

5. Dimitris E. Ioannou, Franklin  L. Duan, Shankar P. Sinha, and Andrej Zaleski, ¡§Opposite-Channel-Based Injection (OCBI) of Hot-Carriers in SOI MOSFET¡¦s: Physics and Applications¡¨, IEEE Transaction on Electron Devices, vol.45, May 1998.

6. D.E. Ioannou, F.L. Duan, and X. Zhao, ¡§SIMOX Substrate and MOSFET¡¦s for Enhanced Reliability and Performance¡¨, 1997 International Semiconductor Device Research Symposium, pp.627-630, 1997.

7. Dimitris E. Ioannou, Franklin L. Duan, Williams C. Jenkins, and Harold L. Hughes, ¡§Channel Coupling Imposed Tradeoffs on Fully-Depleted (FD) SOI MOSFET¡¦s¡¨, submitted to ESSDREC¡¦98.

8. X. Zhao F.L. Duan, A. Thanailakis, D.E. Ioannou, R.K. Lawrence, and H.L. Hughes, ¡§Hole Trap Investigation in Supplemental Oxygen SIMOX Wafers by Opposite Channel Based Charge Injection¡¨, 1997 IEEE International SOI Conference Proceedings, pp.116-117, 1997.

9. Shankar P. Sinha, Franklin L. Duan, Dimitris E. Ioannou, William C. Jenkins, and Harold L. Hughes, ¡§Time Dependence Power Laws of Hot Carrier Degradation in SOI MOSFET¡¦s¡¨, 1996 IEEE International SOI Conference Proceedings, pp.18-19, 1996.

10. S. P. Sinha, F.L. Duan, D.E. Ioannou, William C. Jenkins, Harold L. Hughes, and M.S. Liu, ¡§Hot Carrier Degradation of Fully Depleted SIMOX MOSFET¡¦s¡¨, Proceedings of the 7th International Symposium On Silicon-On-Insulator Technology and Devices, pp.324-329, 1996.

Patents:

  1. Reduced soft error rate (SER) construction for integrated circuit structures, issued 2002
  2. Single channel four transistor SRAM, issued, 2002
  3. A new method to detect random and systematic transistor degradation for transistor reliability evaluation in high-density memory -- filed
  4. A unique way to characterize the shared contact used in high-density SRAM cell design in SoC ¡V filed
  5. New methodology to measure many more transistors on the same test area ¡V filed
  6. Single Channel four transistor SRAM
  7. Novel embedded SRAM and Logic structure for reducing soft error rate (SER)
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Links:

"Design and Use of Memory-Specific Test Structures to Ensure SRAM Yield and Manufacturability", ISQED'2003, pp119-124, F. Duan, R. Castagnetti, R. Venkatraman, O. Kobozeva, and S. Ramesh, LSI Logic Corporation, 2003  http://csdl.computer.org/comp/proceedings/isqed/2003/1881/00/18810119abs.htm or  http://www.sigda.org/Archives/ProceedingArchives/Compendiums/papers/2003/isqed03/pdffiles/2b_1.pdf

"High-Density and High-Performance 6T-SRAM for System-on-Chip in 130 nm CMOS Technology", W. Kong, R.Venkatraman, R. Castagnetti, F. Duan and S. Ramesh, VLSI Symposium, 2001. [PDF] High-Density and High-Performance 6T-SRAM for System-on-Chip in ...

Previous:

1. Franklin L. Duan, Dimitris E. Ioannou, Shankar P. Sinha, and Frederick T. Brady,  ¡§LDD Design Tradeoffs for Self Latch-Up and Hot Carrier Degradation Control in Accumulation Mode FD SOI MOSFET¡¦s¡¨, IEEE Transactions on Electron Devices, vol. 44, pp.972-977, 1997. http://ieeexplore.ieee.org/iel1/16/12670/00585553.pdf?isNumber=12670&prod=JNL&arnumber=585553&arSt=972&ared=977&arAuthor=Duan%2C+F.L.%3B+Sinha%2C+S.P.%3B+Ioannou%2C+D.E.%3B+Brady%2C+F.T.

2. F.L. Duan, X.Zhao, D.E. Ioannou, H.L. Hughes and S.T. Liu, ¡§Detrimental Edge Effects on the Floating Body Phenomena in SOI MOSFETs¡¨, Symposium of 192nd International Meeting of the Electrochemical Society, Inc., pp.239-245, 1997.

3. Franklin L. Duan and Dimitris E. Ioannou, ¡§Design and Analysis of a Novel Mixed Accumulation/Inversion Mode FD SOI MOSFET¡¨, 1997 IEEE International SOI Conference Proceedings, pp.100-101, 1997. http://ieeexplore.ieee.org/xpls/abs_all.jsp?isNumber=13782&prod=CNF&arnumber=634952&arSt=100&ared=101&arAuthor=Daun%2C+F.L.%3B+Ioannou%2C+D.E.&arNumber=634952&a_id0=634948&a_id1=634949&a_id2=634950&a_id3=634951&a_

4. Franklin L. Duan, Dimitris E. Ioannou, Harold L. Hughes and Mike Liu, ¡§Channel Coupling Imposed Tradeoffs Between Hot Carrier Degradation and Single Transistor Latch-Up in FD SOI MOSFET¡¦s¡¨, IEEE International Reliability Physics Symposium, pp.194-202, 1998. http://intl.ieeexplore.ieee.org/xpl/abs_free.jsp?arNumber=670542

5. Duan, F.L.; Zhao, X.; Ioannou, D.E."Increased channel edge impact ionization in SOI MOSFET's and effects on device operation" SOI Conference, 1998. Proceedings., 1998 IEEE International , 5-8 Oct. 1998, Pages:171 - 172 [Abstract]   [PDF Full-Text (216KB)] 

6. Dimitris E. Ioannou, Franklin  L. Duan, Shankar P. Sinha, and Andrej Zaleski, ¡§Opposite-Channel-Based Injection (OCBI) of Hot-Carriers in SOI MOSFET¡¦s: Physics and Applications¡¨, IEEE Transaction on Electron Devices, vol.45, May 1998. http://ieeexplore.ieee.org/iel4/16/14610/00669576.pdf?isNumber=14610&arnumber=669576&prod=JNL&arSt=1147&ared=1154&arAuthor=Ioannou%2C+D.E.%3B+Duan%2C+F.L.%3B+Sinha%2C+S.P.%3B+Zaleski%2C+A.

7. D.E. Ioannou, F.L. Duan, and X. Zhao, ¡§SIMOX Substrate and MOSFET¡¦s for Enhanced Reliability and Performance¡¨, 1997 International Semiconductor Device Research Symposium, pp.627-630, 1997.

8. Dimitris E. Ioannou, Franklin L. Duan, Williams C. Jenkins, and Harold L. Hughes, ¡§Channel Coupling Imposed Tradeoffs on Fully-Depleted (FD) SOI MOSFET¡¦s¡¨, submitted to ESSDREC¡¦98.

9. X. Zhao F.L. Duan, A. Thanailakis, D.E. Ioannou, R.K. Lawrence, and H.L. Hughes, ¡§Hole Trap Investigation in Supplemental Oxygen SIMOX Wafers by Opposite Channel Based Charge Injection¡¨, 1997 IEEE International SOI Conference Proceedings, pp.116-117, 1997. [Abstract]   [PDF Full-Text (132KB)]

10. Shankar P. Sinha, Franklin L. Duan, Dimitris E. Ioannou, William C. Jenkins, and Harold L. Hughes, ¡§Time Dependence Power Laws of Hot Carrier Degradation in SOI MOSFET¡¦s¡¨, 1996 IEEE International SOI Conference Proceedings, pp.18-19, 1996.

11. S. P. Sinha, F.L. Duan, D.E. Ioannou, William C. Jenkins, Harold L. Hughes, and M.S. Liu, ¡§Hot Carrier Degradation of Fully Depleted SIMOX MOSFET¡¦s¡¨, Proceedings of the 7th International Symposium On Silicon-On-Insulator Technology and Devices, pp.324-329, 1996.

Direct (Local)

  • 00585553ted1997.pdf
  • 00634952soi1997.pdf
  • 00670542irps1998.pdf
  • 00723166soi1998.pdf
  • 00934971wkongvlsi2001.pdf
  • 01194719isqed2003.pdf
  • 04098706iirw2006.pdf

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